2SD1864TV2R

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The 2SD1864TV2R is a type of Bipolar Junction Transistor (BJT) which belongs in the category of single transistors. As a single general purpose transistor, it can be utilized in many different applications, making it a very versatile component.

The 2SD1864TV2R is a NPN bipolar junction transistor, with a collector current IC of 5A and a DC current gain (HFE) of 10 to 115. It has a collector-emitter voltage of 240V and a maximum emitter-base voltage of 5V. It has a maximum power dissipation of 4 watt and a maximum junction temperature of 150°C.

Being a general purpose transistor, the 2SD1864TV2R can be used in many different applications. It can be used to control currents ranging from 5 to 115 Amps. It may be used in switching applications, linear and switching regulators, driver circuits, motor control and interface circuits, adaptive control and power circuits, as well as motion control, noise suppression, and intermediate power switching. Additionally, it may be used in many different electronic components such as amplifiers, switches, feedback stabilizers, temperature controllers and lighting controls.

The 2SD1864TV2R is designed to operate with a DC current, and its working principle is based on the principles of a bipolar junction transistor. A bipolar junction transistor is a three-terminal semiconductor device that uses an electric current to amplify a signal or as an electronic switch. It uses the controlled voltage to receive control signals and to operate in either an on or off state. The “on” state is responsible for the current flowing through the device and the “off” state is responsible for the current not flowing through the device. As electric current is allowed to pass and a certain level of voltage is applied to the BJT, the device will enter the “on” state, allowing current to flow and vice-versa.

In conclusion, the 2SD1864TV2R is a NPN bipolar junction transistor that is used in many different types of applications. It can be used in switching, linear and switching regulators, driver circuits and many other types of applications. It has a maximum power dissipation of 4 watts and a maximum junction temperature of 150°C. The device is designed to operate with a DC current and it works on the principles of a bipolar junction transistor.

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