2SD1963T100R

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Advancements in today’s technology continue to drive the market for leading-edge bipolar junction transistors (BJT). Building upon our long history of technical leadership in transistors, 2SD1963T100R is an end-stop surface mount device that is the perfect choice for many applications in the digital age. With a wide operating range, low saturation voltage, high current capacity, and a host of other features, 2SD1963T100R is ideal for switching, amplification, and digital signal processing applications.

The 2SD1963T100R is a single-transistor BJT that features an epitaxial base layer silicon construction. This particular design yields a low saturation voltage of only 0.3V, allowing for extreme switching speed and high performance. With a wide working range from -50°C to +125°C, this transistor is suited for virtually all modern digital applications. The package size of the 2SD1963T100R is 2.0x2.0mm, making it small enough to be used in portable electronics, as well as in integrated circuits.

The primary application of the 2SD1963T100R is for switching and amplification of digital signals. It is well suited for time critical applications, such as AFE (Analog to Digital) converters and power amplifiers. It is also suitable for higher voltage applications due to its low saturation voltage, which results in less stress on components. Additionally, this transistor can be used as a buffer stage in digital-to-analog (D-A) converters.

The working principle of the 2SD1963T100R is simple. In an NPN BJT, a positive voltage applied to the base terminal forces the electrons to move away from the base. As a result, the voltage across the collector-base junction is increased, creating an avalanche effect. This current flow causes the collector current to increase, creating an output signal. By controlling the current at the base, it is possible to regulate the amount of current flowing between the collector and emitter, allowing for precise current control.

The 2SD1963T100R provides a wide range of features and benefits. Its low saturation voltage makes it well-suited for many types of digital applications, and its small footprint is ideal for use in portable electronics. Its wide operating range permits it to be used in extreme conditions, and its ability to switch signals quickly ensures smooth operation. The 2SD1963T100R’s high current capacity makes it an effective amplifier for digital signals, and its low noise levels promise reliable performance.

In summary, the 2SD1963T100R is an ideal choice for many digital applications, providing a high performance, low noise transistor with a low saturation voltage. Its wide operating range makes it ideal for extreme conditions, and its small footprint is ideal for portable electronics. Its high current capacity is also helpful in boosting signal strengths, while its high speed switching capabilities make it suitable for time-sensitive applications.

The specific data is subject to PDF, and the above content is for reference