AFT18H356-24SR6

The AFT18H356-24SR6 is a N-Channel junction Field-Effect Transistor (JFET) in a very small SOT-23 package. The device has been designed for use in low noise and high frequency applications up to 200 MHz. The AFT18H356-24SR6 is a depletion mode device, meaning that the current flow through the transistor is blocked as long as there is no gate bias present. This makes it an ideal choice for typically low-current RF applications.

The AFT18H356-24SR6 is an ideal choice for many applications requiring low noise and low distortion, such as low-noise amplifiers, IF amplifiers, mixers, and other circuits operating at low-to-moderate frequency. It is also a good fit for operation in gain stages, RF preamplifiers, as well as as Phase-Locked Loop applications. AFT18H356-24SR6 devices also perform well in voltage-controlled oscillators and equivalent frequency synthesizer circuits.

The basic operation of the AFT18H356-24SR6 is simple. The device includes a gate terminal that is typically connected to a DC voltage source. When this DC voltage is applied, a small channel of “two-dimensional electrons” is created between the source and the drain terminals. As the voltage applied to the gate terminal increases, the conduction of electrons increases, allowing more current to flow from the source to the drain terminal.

As far as the electrical characteristics of the AFT18H356-24SR6 go, the device has a maximum drain-source voltage of 20V, with a drain current of up to 400mA. The off-state drain-source resistance can reach as high as 220 Ω. The device is also capable of providing very low-noise results in highly bias-dependent designs, with a typical noise figure of 2 dB.

In conclusion, the AFT18H356-24SR6 is an excellent choice of device for many low-noise, high-frequency RF applications. The simple operation of the device, along with its low-noise and low-distortion performance make it an ideal choice for a variety of low-current applications.