AFT18H357-24SR6

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

RF transistors are semiconductor devices used in radio-frequency and microwave communication. They are among the most widely used devices in the electronics industry, due to their ability to perform a wide range of tasks, such as amplifying and switching radio-frequency signals.

The AFT18H357-24SR6 is a high-performance RF transistor from Advanced Semiconductor, Inc. It is designed for use in broadband wireless applications in the 400 and 800MHz frequency bands. It features a low-noise preamplifier for enhanced reception in challenging RF environments.

The AFT18H357-24SR6 is a Field Effect Transistor (FET). FETs are unipolar semiconductors, meaning they use only one type of carrier in their operation: electrons. As a result, they can exhibit excellent performance characteristics when operated at radio frequencies (RF). The AFT18H357-24SR6 is a Metal Oxide Semiconductor FET (MOSFET) which is the most commonly used type of FET in the electronics industry.

MOSFETs work by using a voltage applied between a metal gate and the surface of a semiconductor material, such as silicon. This creates an electric field between the gate and the surface of the material. By varying the magnitude of the electric field, the MOSFET can be made to conduct or block current, thus enabling it to perform a range of switching, amplifying, and filtering functions.

The AFT18H357-24SR6 is specifically designed for RF applications, so it has higher performance characteristics than standard MOSFETs. It has a lower input capacitance which helps to reduce noise, higher gain-bandwidth product for greater power gain, and lower gate leakage current for improved operating efficiency. It also has a wide operating temperature range (-55 to +175 Celsius), making it suitable for use in a wide range of applications.

The AFT18H357-24SR6 is used in a variety of applications, including low-noise amplifiers, power amplifiers, and gain blocks. It is also used in modems, wireless access points, wireless radios, and wireless router antennas. It is an ideal choice for these applications due to its excellent RF performance.

RF transistors play an important role in the electronics industry, and the AFT18H357-24SR6 from Advanced Semiconductor, Inc. is an excellent example of a high-performance RF transistor. It is well-suited for use in a variety of applications due to its low-noise preamplifier, low input capacitance, high gain-bandwidth product, low gate leakage current and wide operating temperature range.

The specific data is subject to PDF, and the above content is for reference