AFT18S230SR3 Allicdata Electronics
Allicdata Part #:

AFT18S230SR3-ND

Manufacturer Part#:

AFT18S230SR3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: FET RF 65V 1.88GHZ NI780S-6
More Detail: RF Mosfet LDMOS 28V 1.8A 1.88GHz 19dB 50W NI-780S
DataSheet: AFT18S230SR3 datasheetAFT18S230SR3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: LDMOS
Frequency: 1.88GHz
Gain: 19dB
Voltage - Test: 28V
Current Rating: --
Noise Figure: --
Current - Test: 1.8A
Power - Output: 50W
Voltage - Rated: 65V
Package / Case: NI-780S
Supplier Device Package: NI-780S
Description

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The Field-Effect Transistor (FET) is a type of transistor that works as a switch and works by controlling the flow of electrical current between its terminals. One of the most commonly used FETs is the AFT18S230SR3. It is a radio-frequency MOSFET that is manufactured in a special package and is specifically designed for use in cellular, wireless, and satellite communications. In this article, we will explore the application field and working principle of the AFT18S230SR3.

Application Field

The AFT18S230SR3 is a high-efficiency, high-power radio-frequency MOSFET that is suitable for use in demanding applications such as cellular, wireless, and satellite communication. It is designed for low-noise, high-sensitivity, and low-power consumption applications. It is also ideal for use in high-frequency switching circuits, amplifiers, RF power amplifiers, and broadband networks. Additionally, it can also be used in digital broadcast, TV, and radio applications.

Working Principle

The AFT18S230SR3 operates by modulating the flow of electrical current between its source and drain terminals. The source terminal is connected to the power source and the drain terminal is connected to the load. The gate terminal is used to control the flow of current between the source and the drain terminals. By applying a signal voltage to the gate, the MOSFET switches either on or off, depending on the voltage level of the signal. When the signal voltage is high, it will switch on and current will flow from the source to the drain terminal. Conversely, when the signal voltage is low, it will switch off and the current will be blocked from flowing.

Advantages

The AFT18S230SR3 offers several advantages over other types of transistors. Firstly, it offers high efficiency and power efficiency, which makes it suitable for applications that require low power consumption. Additionally, it has very low noise levels, which is ideal for high-sensitivity applications. Furthermore, it is designed with a temperature range up to +175°C, which makes it suitable for use in extreme temperatures. Lastly, it is also very reliable and its performance is not affected by temperature or humidity.

Conclusion

The AFT18S230SR3 is a high-performance radio-frequency MOSFET that is suitable for use in demanding applications such as cellular, wireless, and satellite communication. Its ability to modulate the flow of current between its source and drain terminals makes it very efficient and reliable. It is also designed with features that make it suitable for use in extreme temperature ranges and low-noise, high-sensitivity applications. Therefore, the AFT18S230SR3 makes an excellent choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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