Allicdata Part #: | AFT18S230SR3-ND |
Manufacturer Part#: |
AFT18S230SR3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 65V 1.88GHZ NI780S-6 |
More Detail: | RF Mosfet LDMOS 28V 1.8A 1.88GHz 19dB 50W NI-780S |
DataSheet: | AFT18S230SR3 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 1.88GHz |
Gain: | 19dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 1.8A |
Power - Output: | 50W |
Voltage - Rated: | 65V |
Package / Case: | NI-780S |
Supplier Device Package: | NI-780S |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The Field-Effect Transistor (FET) is a type of transistor that works as a switch and works by controlling the flow of electrical current between its terminals. One of the most commonly used FETs is the AFT18S230SR3. It is a radio-frequency MOSFET that is manufactured in a special package and is specifically designed for use in cellular, wireless, and satellite communications. In this article, we will explore the application field and working principle of the AFT18S230SR3.
Application Field
The AFT18S230SR3 is a high-efficiency, high-power radio-frequency MOSFET that is suitable for use in demanding applications such as cellular, wireless, and satellite communication. It is designed for low-noise, high-sensitivity, and low-power consumption applications. It is also ideal for use in high-frequency switching circuits, amplifiers, RF power amplifiers, and broadband networks. Additionally, it can also be used in digital broadcast, TV, and radio applications.
Working Principle
The AFT18S230SR3 operates by modulating the flow of electrical current between its source and drain terminals. The source terminal is connected to the power source and the drain terminal is connected to the load. The gate terminal is used to control the flow of current between the source and the drain terminals. By applying a signal voltage to the gate, the MOSFET switches either on or off, depending on the voltage level of the signal. When the signal voltage is high, it will switch on and current will flow from the source to the drain terminal. Conversely, when the signal voltage is low, it will switch off and the current will be blocked from flowing.
Advantages
The AFT18S230SR3 offers several advantages over other types of transistors. Firstly, it offers high efficiency and power efficiency, which makes it suitable for applications that require low power consumption. Additionally, it has very low noise levels, which is ideal for high-sensitivity applications. Furthermore, it is designed with a temperature range up to +175°C, which makes it suitable for use in extreme temperatures. Lastly, it is also very reliable and its performance is not affected by temperature or humidity.
Conclusion
The AFT18S230SR3 is a high-performance radio-frequency MOSFET that is suitable for use in demanding applications such as cellular, wireless, and satellite communication. Its ability to modulate the flow of current between its source and drain terminals makes it very efficient and reliable. It is also designed with features that make it suitable for use in extreme temperature ranges and low-noise, high-sensitivity applications. Therefore, the AFT18S230SR3 makes an excellent choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
AFT18S230SR5 | NXP USA Inc | -- | 1000 | FET RF 65V 1.88GHZ NI780S... |
AFT18S230SR3 | NXP USA Inc | -- | 1000 | FET RF 65V 1.88GHZ NI780S... |
AFT18S230-12NR3 | NXP USA Inc | -- | 1000 | IC TRANS RF LDMOSRF Mosfe... |
AFT18H357-24NR6 | NXP USA Inc | 81.18 $ | 1000 | IC TRANS RF LDMOSRF Mosfe... |
AFT18S290-13SR3 | NXP USA Inc | 83.79 $ | 1000 | FET RF 65V 1.96GHZ NI-880... |
AFT18S260W31GSR3 | NXP USA Inc | 84.22 $ | 1000 | IC TRANS RF LDMOSRF Mosfe... |
AFT18S260W31SR3 | NXP USA Inc | 84.22 $ | 1000 | IC TRANS RF LDMOSRF Mosfe... |
AFT18P350-4S2LR6 | NXP USA Inc | -- | 1000 | FET RF 2CH 65V 1.81GHZ NI... |
AFT18H356-24SR6 | NXP USA Inc | 108.33 $ | 1000 | FET RF 2CH 65V 1.88GHZ NI... |
AFT18H357-24SR6 | NXP USA Inc | -- | 1000 | FET RF 2CH 65V 1.81GHZ NI... |
AFT18HW355SR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 2CH 65V 1.88GHZ NI... |
AFT18HW355SR6 | NXP USA Inc | 0.0 $ | 1000 | FET RF 2CH 65V 1.88GHZ NI... |
BT-AFT1 | Amprobe | 0.0 $ | 1000 | ARC FAULT BREAKER TESTERW... |
FET RF 68V 2.16GHZ NI-400RF Mosfet LDMOS...
FET RF 68V 1.99GHZ TO270-4RF Mosfet LDMO...
FET RF 40V 175MHZ TO272-6 WRAPRF Mosfet ...
FET RF 65V 2.17GHZ NI780SRF Mosfet LDMOS...
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...