Allicdata Part #: | AFT18S260W31SR3-ND |
Manufacturer Part#: |
AFT18S260W31SR3 |
Price: | $ 84.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | IC TRANS RF LDMOS |
More Detail: | RF Mosfet LDMOS 28V 1.8A 1.88GHz 19.6dB 50W NI-780... |
DataSheet: | AFT18S260W31SR3 Datasheet/PDF |
Quantity: | 1000 |
250 +: | $ 76.56250 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 1.88GHz |
Gain: | 19.6dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 1.8A |
Power - Output: | 50W |
Voltage - Rated: | 65V |
Package / Case: | NI-780S-2L2LA |
Supplier Device Package: | NI-780S-2L2LA |
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AFT18S260W31SR3 is a highly efficient and sophisticated type of Field Effect Transistor (FET) and Metal Oxide Semiconductor Field Effect Transistor (MOSFET). This device is mainly used in radiofrequency (RF) application, due to its excellent characteristics of high power, high switching speed and low noise. The basic working principle of FETs and MOSFETs is based on field effect, which is a phenomenon of electrical conduction. It is the electrical current that is generated when an electric field is applied between an insulated gate and the body of a semiconductor material, such as silicon. This current flows in a transistor, where the small amount of current that enters the gate is amplified, resulting in a large "drain" current in the N or P type material. This current is amplified by the resistance and capacitance between the drain and source regions of the transistor.The AFT18S260W31SR3 device consists of a Silicon On Insulator (SOI) MOSFET integrated in a power transistor. It is designed for high reliability applications, with superior thermal characteristics and low on-resistance per unit of gate area. The gate drive characteristics allow the design of extremely low control current circuits, while exhibiting both fast switching characteristics and low distortion. It features an integrated gate voltage capacitance, built-in thermal protection and the ability to dissipate large amounts of power. It is capable of controlling current without significant gate voltage drops, and can also be used as a shunt regulator.The AFT18S260W31SR3 is used in RF application due to its extremely low on-resistance, as well as its high flexibility due to its range of package configurations. It can work effectively in switching applications such as Telecom, Cellular, Broadcast and Military systems. Additionally, it is also well suited for high power applications requiring precision performance, such as Power Distribution, Antennas, IoT and Automotive.Overall, the AFT18S260W31SR3 is a capable device for RF applications, and can be used for many different types of applications. Its impressive characteristics, such as low on-resistance, high power, large thermal performance and fast switching times, make it an ideal choice for high reliability applications. Its range of package configurations and self-protection features also make it an attractive option in both RF and other types of applications.
The specific data is subject to PDF, and the above content is for reference
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