Allicdata Part #: | AFT18S230-12NR3-ND |
Manufacturer Part#: |
AFT18S230-12NR3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | IC TRANS RF LDMOS |
More Detail: | RF Mosfet LDMOS 28V 1.4A 1.88GHz 17.6dB 50W OM-780... |
DataSheet: | AFT18S230-12NR3 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 1.88GHz |
Gain: | 17.6dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 1.4A |
Power - Output: | 50W |
Voltage - Rated: | 65V |
Package / Case: | OM-780-2L2L |
Supplier Device Package: | OM-780-2L2L |
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The AFT18S230-12NR3 is an transistor that belongs to the family of Field Effect Transistors (FETs) and is a type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is more specifically a Radio Frequency (RF) FET, meaning that it is designed to amplify or otherwise switch RF signals, typically in the GHz range.
The primary application of MOSFETs like the AFT18S230-12NR3 are in amplification of electrical signals. As noted, they can be used in the GHz range of frequencies and are especially useful when used in amplifier circuits that operate at high frequencies. This is because they have superior switching characteristics and faster switching times than bipolar junction transistors. Additionally, FETs have a very low input capacitance which reduces noise.
The AFT18S230-12NR3 is specifically designed for use in RF applications. It is a high voltage, high speed FET that is capable of switching up to 18V. It has a low input capacitance and can operate at frequencies up to 8GHz. Furthermore, it has excellent gain linearity and cross talk performance, making it well suited for high frequency applications.
The working principle of the AFT18S230-12NR3 is based on the basic operation of MOSFETs in general. A MOSFET is a three-terminal device that consists of source and drain terminals, which are connected to its two electrical leads, and a gate terminal, which is connected to its gate oxide layer. The device is formed when a metal oxide layer is sandwiched between the source and drain terminals. When an electric field is applied to the gate terminal, it modulates the current flowing between the source and drain terminals.
This is done by controlling the number of electrons that can pass through the device by changing the voltage on the gate terminal. The higher the voltage on the gate terminal, the more electrons can pass through the device and the higher the current that passes through the device. The AFT18S230-12NR3 uses this principle to amplify or switch RF signals.
In conclusion, the AFT18S230-12NR3 is a high voltage, high speed FET that is designed for RF applications. It has a low input capacitance and can operate at frequencies up to 8GHz. Additionally, it has excellent gain linearity and cross talk performance. Its working principle is based on the basic operation of MOSFETs and it is used in amplifier circuits that operate at high frequencies.
The specific data is subject to PDF, and the above content is for reference
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