AFT18H357-24NR6

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The AFT18H357-24NR6 Dual FET represents an advanced process that combines both NMOS and PMOS RF devices into a monolithic structure. With its low on-resistance, high breakdown voltages, and ESD protection, it is the ideal choice for RF power amplifiers and many other RF applications. In this article, we\'ll discuss the application field and working principle of the AFT18H357-24NR6 dual FET.

General Applications

The AFT18H357-24NR6 dual FET is a general-purpose FET design and is ideally suited for many RF applications. Some of the most common applications include frequency doubling, analog emulation circuits, and amplification. The FET is also used in high frequency switching applications, such as power amplifiers, because of its high breakdown and low on-resistance characteristics. It is also suitable for use in modulators, up-converters, as well as other RF applications.

Working Principle

The AFT18H357-24NR6 Dual FET is a two-terminal, three-terminal, or four-terminal device, depending on its setup. The FET is essentially an insulated-gate field-effect transistor that utilizes a gate voltage to control the amount of current that flows between the source and drain terminals. In essence, it acts like a voltage-controlled switch. As the gate voltage is increased, the current passing through increases exponentially. This makes the FET ideal for applications where high-speed switching is required, such as frequency doubling and switching in power amplifiers.

The gate of the FET is typically biased with a negative voltage, and the source is tied to ground. When voltage is applied to the gate, a potential barrier is created between the drain and the source, allowing a current to flow between them. As the gate voltage is increased, the potential barrier becomes increasingly stronger, allowing the current to flow more freely and increasing the FET\'s “on” resistance, or conduction. Conversely, when the gate voltage is decreased, the FET turns “off” and effectively blocks the current flow. This makes the FET ideal for applications that require precise control of current flow, such as analog emulation circuits or RF power amplifiers.

Conclusion

The AFT18H357-24NR6 Dual FET is a versatile FET that is suitable for many RF applications. Its low on-resistance and high breakdown voltages make it ideal for high-speed switching applications, such as frequency doubling, analog emulation circuits, power amplifiers, and modulators. By utilizing a gate voltage to control the amount of current that flows between its source and drain terminals, the FET is able to achieve precise control of current flow, making it an ideal choice for many RF applications.

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