AFT18S260W31GSR3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The AFT18S260W31GSR3 is a dual gate MESFET (Metal-Semiconductor Field Effect Transistor). This transistor is designed for use in high frequency RF applications, such as amplifiers, oscillators, and mixers. It has a higher breakdown voltage than an MOSFET, but lower than a Bipolar Junction Transistor (BJT). This makes it a good choice for high-power applications that require high voltage switching.

The MESFET is a three terminal device, consisting of a source, a gate, and a drain. It operates on the principle of modulation of the current flowing between the source and the drain by the applied voltage on the gate. The gate of the MESFET is insulated from the source and drain, similar to a MOSFET. However, the MESFET also has an additional region called a "channel", which allows current to flow between the source and drain without the need for a reverse bias voltage at the gate.

In operation, the applied voltage at the gate is used to modulate the flow of current between the source and the drain. As the voltage on the gate increases, the current flowing between the source and drain increases. The gain of the device is determined by the ratio of the current to the voltage at the gate.

The MESFET is typically used in high-frequency, high-power applications, such as RF amplifiers, oscillators and RF mixers. It provides high performance, low power consumption and excellent linearity. The AFT18S260W31GSR3 is a high frequency MESFET device, which provides high gain and low noise when used in RF amplifier and mixer circuits. The device is also ideal for use in RF-based communication systems, including cellular phones and Wi-Fi applications.

The AFT18S260W31GSR3 provides superior performance in high-frequency applications due to its low gate capacitance and high transconductance. The device is designed to operate over a wide temperature range, from -55 to +150 degrees Celsius. It has a maximum drain-source breakdown voltage of 160V and a maximum drain-source on-state resistance of 310 ohms. It can handle a maximum drain current of18A in pulsed conditions.

The AFT18S260W31GSR3 is well suited for applications such as RF amplifiers, oscillators, mixers, and other high frequency radio frequency (RF) circuits. Its low gate capacitance and high transconductance make it suitable for use in high-power, high-frequency applications. It can also be used in RF power amplifiers, such as those used in cellular phones and Wi-Fi systems.

The specific data is subject to PDF, and the above content is for reference