| Allicdata Part #: | AFT18P350-4S2LR6-ND |
| Manufacturer Part#: |
AFT18P350-4S2LR6 |
| Price: | $ 106.26 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | NXP USA Inc |
| Short Description: | FET RF 2CH 65V 1.81GHZ NI1230 |
| More Detail: | RF Mosfet LDMOS (Dual) 28V 1A 1.81GHz 16.1dB 63W N... |
| DataSheet: |  AFT18P350-4S2LR6 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 106.26000 |
| 10 +: | $ 103.07200 |
| 100 +: | $ 100.94700 |
| 1000 +: | $ 98.82180 |
| 10000 +: | $ 95.63400 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | LDMOS (Dual) |
| Frequency: | 1.81GHz |
| Gain: | 16.1dB |
| Voltage - Test: | 28V |
| Current Rating: | -- |
| Noise Figure: | -- |
| Current - Test: | 1A |
| Power - Output: | 63W |
| Voltage - Rated: | 65V |
| Package / Case: | NI-1230-4LS2L |
| Supplier Device Package: | NI-1230-4LS2L |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The AFT18P350-4S2LR6 is a high power RF MOSFET that is used in a variety of applications. It is a high power, low noise, and high frequency device that can be used for high power communications, and digital signal processing.
The AFT18P350-4S2LR6 is a fourth-generation, high-power field-effect transistor (FET) device with a versatile, high-frequency RF design. This device has a maximum input power of 350W and an output of 4S2LR6. This device has an 18V drain-source voltage and a reverse leakage current of 0.075A.
The AFT18P350-4S2LR6 is designed to meet the high power requirements of today’s radio frequency (RF) applications. This device is well suited for use in communications systems, including cellular, cellular backbone, and many other applications. The device can be used in many high-end, high-power transceivers, as well as base stations. It is also used in low-noise, high-performance signal processing devices in digital signal processing (DSP) systems.
The device works by taking an input signal and amplifying it through a series of Field-Effect Transistors (FETs). The amplified signal is then routed out to the appropriate output. This type of circuit is well suited for amplifying signals over a wide range of frequencies, from a few kHz to several GHz. The device is also often used in power amplifiers in high frequency applications, such as microwave ovens, radar, and other high-frequency systems.
The AFT18P350-4S2LR6 is a versatile and reliable device that can be used in a variety of RF applications. It can be used to provide consistent and high-quality performance in a variety of scenarios, including high-power communications, digital signal processing, and power amplifiers. This device is sure to meet the requirements of many applications that require the highest performance, low noise, and high frequency.
The specific data is subject to PDF, and the above content is for reference
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