AFT18S290-13SR3 Allicdata Electronics
Allicdata Part #:

AFT18S290-13SR3-ND

Manufacturer Part#:

AFT18S290-13SR3

Price: $ 83.79
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: FET RF 65V 1.96GHZ NI-880X-2L4S
More Detail: RF Mosfet LDMOS 28V 2A 1.96GHz 18.2dB 63W NI-880XS...
DataSheet: AFT18S290-13SR3 datasheetAFT18S290-13SR3 Datasheet/PDF
Quantity: 1000
250 +: $ 76.17330
Stock 1000Can Ship Immediately
$ 83.79
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: LDMOS
Frequency: 1.96GHz
Gain: 18.2dB
Voltage - Test: 28V
Current Rating: --
Noise Figure: --
Current - Test: 2A
Power - Output: 63W
Voltage - Rated: 65V
Package / Case: NI-880XS-6
Supplier Device Package: NI-880XS-6
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The AFT18S290-13SR3 is a product by Freescale Semiconductor, now officially a part of NXP. NXP is a technology company that has traditionally specialized in the automotive and industrial sectors, but now has a portfolio that extends to many other fields.

The AFT18S290-13SR3 is a Field Effect Transistor (FET) of the RF type. FETs are a kind of transistor that utilize the properties of an oxide layer (the word “Field Effect” comes from this oxide layer) to amplify electrical signals. There are two major types of FETs — bipolar and field effect — and the AFT18S290-13SR3 is an example of the latter.

The RF type of FETs, as the name would suggest, are specifically designed for use with Radio Frequency signals, which typically come in the range of 20Khz to 4Ghz. This makes them especially good for use in wireless technologies, such as Wi-Fi or Bluetooth, as well as other applications that require signal amplification or signal mixing.

But what makes the AFT18S290-13SR3 so special is that it is designed specifically to operate at CMOS logic levels — in other words, it is designed to be used in a digital system. This makes it especially suited for use in applications that need to convert analog signals to digital, and vice versa.

In terms of its working principle, the AFT18S290-13SR3 works by using an insulated gate. When an input voltage is applied to this gate, it will allow current to flow through it from the source to the drain, thus switching the transistor on. When the input voltage is removed, the FET will turn off, not allowing any current through.

This makes them well suited for power amplification, as they can be used to selectively control the flow of current without actually needing to directly manipulate the voltage. This can be especially useful for applications that need to quickly switch between on and off states. The AFT18S290-13SR3 is also designed to have low “on-state” resistance (Rss), meaning that it has minimal losses when in its “on” state.

The AFT18S290-13SR3 is thus well suited for use in a variety of applications, from RF power amplifiers in wireless technologies, to power switching in industrial applications. It is especially useful in applications that require high-frequency digital-to-analog or analog-to-digital conversion.

The specific data is subject to PDF, and the above content is for reference

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