AFT18HW355SR5

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	LDMOS (Dual)
Frequency:	1.88GHz
Gain:	15.2dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	1.1A
Power - Output:	63W
Voltage - Rated:	65V
Package / Case:	NI-1230S
Supplier Device Package:	NI-1230S

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AFT18HW355SR5 is a type of transistor and more specifically it is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is commonly used in RF (Radio Frequency) applications and it is known for its solid performance. A transistor is a semiconductor device that can be used for amplification, switching, and voltage regulation. They are composed of three terminals - the gate, drain, and source. A transistor is a major part of any electrical circuit and FETs (field-effect transistors) are its most commonly used type. The key difference between conventional transistors and a FET is that the amount of current passing through a FET is controlled by its gate voltage rather than base current. A MOSFET is a type of FET whose operation is based on the metal-oxide-semiconductor structure. It works in a similar manner to a normal FET but it utilizes additional conducting channels to control current passing through its gate. MOSFETs are commonly used in RF switch and amplifier applications due to their excellent efficiency and reliability.The AFT18HW355SR5 is a type of MOSFET specifically designed for RF applications. It has a low on-resistance of just 0.2 ohms and can operate at frequencies of up to 1000MHz. It has an input capacitance of 1pF and an output capacitance of 1.8pF, which makes it well-suited for RF applications. The AFT18HW355SR5 can be used for a range of different applications. It can be used as an amplifier or switch in RF systems, including wireless communication and ADS-B (Automatic Dependent Surveillance-Broadcast). It can also be used as a voltage regulator or to control the current passing through a circuit. The AFT18HW355SR5 operates in a fairly simple manner. When a positive voltage is applied to its gate, it allows current to flow between the source and the drain. As the voltage at the gate increases, the MOSFET contracts and allows even more current to pass. This process can be used to effectively control the flow of current through a circuit, allowing for precise and efficient operation.In summary, the AFT18HW355SR5 is a type of N-channel MOSFET specifically designed for RF applications. It has a low on-resistance and can operate at frequencies of up to 1000MHz. It can be used for a range of different applications, such as amplifying or switching radio signals. It works by allowing current to flow through its gate when a positive voltage is applied, allowing for precise and efficient operation.

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