AFT18S230SR5 Discrete Semiconductor Products |
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Allicdata Part #: | 568-14106-2-ND |
Manufacturer Part#: |
AFT18S230SR5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 65V 1.88GHZ NI780S-6 |
More Detail: | RF Mosfet LDMOS 28V 1.8A 1.88GHz 19dB 50W NI-780S-... |
DataSheet: | AFT18S230SR5 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 1.88GHz |
Gain: | 19dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 1.8A |
Power - Output: | 50W |
Voltage - Rated: | 65V |
Package / Case: | NI-780S |
Supplier Device Package: | NI-780S-6 |
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The AFT18S230SR5 is an RF (radio frequency) MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is a three-terminal device which utilizes field effect technology to control gauge material, making it the top choice of semiconductor components for a variety of applications requiring signal switching, which include radio receivers and transmitters, signal conditioners, signal amplifiers, and other applications in the home electronics sector. The AFT18S230SR5 is a low voltage, low power device. The maximum drain current is 16.5 Amps and the maximum drain-source voltage is 160 Volts.
Application Field of the AFT18S230SR5
The AFT18S230SR5 is most commonly used as a signal switch in radio receivers and transmitters, signal conditioners, amplifiers, and other electronic circuits for home electronics applications. Its low voltage, low power capabilities provide superior performance in small form factor designs, which makes it ideally suited for applications such as bluetooth headsets, cordless products, various radiocontrols (RC), as well as any modern consumer electronics products. This low voltage, low power allows the device to provide excellent performance with minimal power consumption. Also, the small form factor allows it to be employed in almost any design configuration.
Working Principle of the AFT18S230SR5
The AFT18S230SR5 is a three-terminal device in which gate-source voltage controls the conductivity between the drain and the source region. The drain-source current is regulated by the voltage applied between the gate and source. The lower the gate-source voltage, the higher the channel resistance, severely limiting the current flow. When a positive gate-source voltage is applied to the MOSFET, a conducting channel is created between the source and drain, allowing current to flow freely. The MOSFET can be thought of as a variable resistor, whose resistance is dependent on the gate-source voltage.
The AFT18S230SR5 features a short channel length and wide channel width, which allows it to operate in a higher frequency range than other MOSFETs. This is useful for switching applications involving high frequency signals. The AFT18S230SR5 also features a high transconductance, allowing it to support larger signals without losing fidelity. It also includes an integrated parasitics model, providing improved accuracy in system simulations. It also has a very low safe operating area (SOA) limit, allowing for enhanced device protection in fault conditions.
The specific data is subject to PDF, and the above content is for reference
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