AO4838 Discrete Semiconductor Products

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AO4838 is a high voltage, low power N-Channel metal oxide semiconductor field effect transistor (MOSFET) array. This device has eight transistors in one package and has two different gate lengths: 95 and 190. Each gate has its own gate to source resistor as well, which allows the user to make any combination of gate voltage settings across the array. The AO4838 has a drain-to-source breakdown voltage of 80V and a typical on resistance of 2.5 mW. It is suitable for use in a variety of applications, including power switching, analog control, and battery protection.A MOSFET is an electronic device used to control current or voltage in electrical circuits. It consists of a channel between its source and drain that can be controlled by the applied gate voltage. When a positive voltage is applied to the gate, the electrons in the channel are attracted to the gate and form a conducting channel between the source and the drain. This current is then amplified by the FET and the semiconductor can be used for a variety of applications, such as power switching, analog control and battery protection.The AO4838 is specifically designed for use in high voltage and/or low power applications as it can withstannd a drain-to-source breakdown voltage of 80V, making it suitable for a wide range of applications. In addition, this device has two different gate lengths (95 and 190) which allows the user to make any combination of gate voltage settings across the array.The device includes an internal body diode, which ensures an equal voltage in both directions. This means that the voltage across the device will never exceed the maximum voltage rating. The device also features an internal ESD diode which provides protection against electrostatic discharge and improves the devices robustness and immunity to ESD events.The AO4838 also features programmable gate-to-source resistors which allow the user to change the measurement range of the device. This is useful in applications where a precise voltage control is necessary, such as in battery protection and analog control. The gate-to-source resistor also ensures a good signal-to-noise ratio, which is important when measuring small signals.The device is designed to operate over a wide range of temperatures, from -40°C to +125°C, making it ideal for use in extreme conditions. The AO4838 is also RoHS compliant, meaning it does not contain hazardous materials such as lead and cadmium. In conclusion, the AO4838 is a high voltage, low power N-Channel metal oxide semiconductor field effect transistor (MOSFET) array. It is suitable for use in a variety of applications, including power switching, analog control, and battery protection, and has a drain-to-source breakdown voltage of 80V and a typical on resistance of 2.5 mW. It is designed to operate over a wide range of temperatures, from -40°C to +125°C, and features an internal body diode and an internal ESD diode which protects against electrostatic discharge. The AO4838 is RoHS compliant, making it an excellent choice for applications in which hazardous materials are not allowed.

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