AO6400

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AO6400 is an enhancement-mode metal-oxide-semiconductor field-effect transistor (MOSFET) with a single-pole, double-throw configuration. It has a maximum drain current rating of 40A and is designed for use in high-power switching applications. It is an ideal choice for applications such as DC-DC converters, motor-drivers, and power management circuits.

Overview

The AO6400 MOSFET is a 60V single-pole, double-throw (SPDT) device. It has a maximum drain current of 40A and low on-resistance values, making it suitable for applications that require a large amount of power switching. It has an RDS(on) of 1.7mOhm when at 4V and its gate charge is 6.7nC, allowing it to quickly switch current when needed. Its drain-source breakdown voltage is rated at 60V while its drain-source breakdown voltage when snubber voltage is applied is rated at 70V.

Features

• Single-pole, double-throw (SPDT) configuration
• 60V drain-source breakdown voltage
• 40A maximum drain current
• High power-switching capability
• Low on-resistance values
• RDS(on) of 1.7mOhm at 4V
• 6.7nC gate charge

Applications

The AO6400 MOSFET is designed for use in a wide range of high-power switching applications, such as:

• DC-DC converters
• Motor-drivers
• Power management circuits
• Switching power supplies
• High-power amplifiers

Working Principle

The working principle of the AO6400 MOSFET is based on the principle of p-n junction diodes. A small positive voltage is applied to the gate of the transistor (G), which causes a thin inversion layer to form between the source and the drain. This inversion layer acts as a conducting pathway for electrons to flow between the source and the drain. By regulating the amount of current flowing through the inversion layer, the amount of power transferred from the source to the drain can be controlled.

The amount of voltage applied to the gate of the transistor is N-channel MOSFETs (NMOS), which has a high on resistance when a negative voltage is applied. When the voltage is high enough to create the inversion layer, the current flowing through the channel is determined by the RDS(on) rating, which is set by the manufacturer. This is why it is important to use MOSFETs with a low on-resistance value when high power switching is required.

The AO6400 MOSFET has an RDS(on) of 1.7mOhm when at 4V, which provides a very high power-switching capability without sacrificing power efficiency. It also has a low gate charge of 6.7nC, which helps reduce switching time, making it suitable for high-speed and power-critical applications.

Conclusion

The AO6400 MOSFET is an ideal choice for high-power switching applications such as DC-DC converters, motor-drivers, and power management circuits. It has a maximum drain current of 40A, low on-resistance values, and a gate charge of 6.7nC, which allows it to quickly switch current when needed. Its low RDS(on) makes it suitable for high-power applications and its high breakdown voltage ensures reliable operation.

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