Allicdata Part #: | AO6402AL-ND |
Manufacturer Part#: |
AO6402AL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 30V 6TSOP |
More Detail: | N-Channel 30V 7A (Ta) 2W (Ta) Surface Mount 6-TSOP |
DataSheet: | AO6402AL Datasheet/PDF |
Quantity: | 1000 |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Package / Case: | SC-74, SOT-457 |
Supplier Device Package: | 6-TSOP |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 820pF @ 15V |
Vgs (Max): | ±20V |
Series: | -- |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Rds On (Max) @ Id, Vgs: | 27 mOhm @ 7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
AO6402AL is a single-channel N-type enhancement-mode power field-effect transistor (FET). It features excellent RDS(ON) x QG which makes the FET ideal for power switching applications such as loads, DC-DC converters, Switch Mode Power Supplies, Computer Power Supplies and Polarity Protection. The AO6402AL allows for much smaller board area due to its small size and low thermal resistance.
AO6402AL applications include: power electronic products, vehicle-mounted electronic products, various types of motor control, switching power supplies in consumer electronics products, UPS, low noise amplifier, computer power supply and battery management for electric vehicles and energy storage devices. In addition, AO6402AL is also suitable for various types of voltage conversion and load protection.
In terms of its working principle, the AO6402AL uses the field effect in semiconductor materials to control the electrical properties of a transistor. This field-effect is created by a voltage applied across a gate-source terminal that controls the electrical conductivity between the drain and source terminals. When voltage is applied to the gate, it will create an electric field at the gate-source junction. This electric field will effectively “open” the channel, allowing current to flow between the drain and source.
When the voltage is removed from the gate terminal, the electric field collapses and the channel is “closed”, stopping current from flowing between the drain and source. This simple principle of field-effect transistors allows for large currents to be controlled using small gate voltages.
Another key feature of the AO6402AL is its low gate charge. The gate charge is the amount of energy that is needed to “open” or “close” the channel. Lowering the gate charge of the FET improves its efficiency and reduces its power consumption.
The AO6402AL offers many benefits when compared to other FETs such as its low RDS(ON), small size, low thermal resistance and low gate charge. These features make the AO6402AL an ideal choice for use in many applications.
The specific data is subject to PDF, and the above content is for reference
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