AO6403 Allicdata Electronics
Allicdata Part #:

785-1070-2-ND

Manufacturer Part#:

AO6403

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET P-CH 30V 6A 6TSOP
More Detail: P-Channel 30V 6A (Ta) 2W (Ta) Surface Mount 6-TSOP
DataSheet: AO6403 datasheetAO6403 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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AO6403 is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) which is often used as a voltage-controlled device in a variety of applications. The powerway AO6403 is a single-die, monolithic device that is fully integrated into a surface-mount package. It has an on-resistance of 8.7 mΩ and provides an efficient, low-power solution for many applications. AO6403 is particularly well suited for regulating the output voltage of a voltage regulator, controlling the gate drive of high voltage MOSFETs, and providing over- and undercurrent protection.

AO6403 belongs to the N-channel MOSFET group. It is mainly composed of two parts – source and drain. The source, drain, gate and substrate of the AO6403 can be divided into six terminals: gate, drain, source, temperature compensation, substrate, and bond. The working principle of a MOSFET is mainly based on the relationship between the electric field and the carrier concentration of a semi-conductive material. In a MOSFET, an electric field is generated between the gate and the substrate. When a voltage is applied between the gate and the substrate, the electrons in the semiconductor material move to form an inversion layer of electrons around the gate, which is the main conduction channel of the device. The resulting field causes a current to pass through the device.

The AO6403 is a high side switch, meaning that the source of the device is connected to the supply and the load is connected to the drain. When a small positive voltage is applied to the gate terminal of the AO6403, the current between the source and the drain increases and the device will switch on. The AO6403 has a low threshold voltage, giving it the capability to regulate the output voltage of a voltage regulator accurately over a wide range of input voltages. It also has a low impedance output, which makes it well suited for providing fast, steady voltage regulation in applications such as power supplies, DC-DC converters, and microcontrollers.

In addition to its use as a voltage controlled device, another major application of the AO6403 is providing over- and undercurrent protection. It is capable of detecting current levels in a circuit and can be used to protect devices and components in the circuit from exposure to excessive current levels that could potentially damage them. The AO6403 can be used to limit the amount of power that is supplied to a circuit, protect against voltage spikes, and reduce stress on components.

The AO6403 is a versatile device capable of providing efficient and reliable performance in a wide range of applications. It is a low-power solution with a low on-resistance of 8.7 mΩ and can be used for controlling the gate drive of high voltage MOSFETs, providing over- and undercurrent protection, and regulating the output voltage of a voltage regulator. Its low threshold voltage also makes it an excellent choice for providing fast, steady voltage regulation in power supplies and DC-DC converters.

The specific data is subject to PDF, and the above content is for reference

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