AO6408

Vgs(th) (Max) @ Id:	1V @ 250µA
Package / Case:	SC-74, SOT-457
Supplier Device Package:	6-TSOP
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2200pF @ 10V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	22nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	18 mOhm @ 8.8A, 10V
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 10V
Current - Continuous Drain (Id) @ 25°C:	8.8A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Application Field and Working Principle of AO6408

The AO6408 is a single vertical DMOSFET device typically used as a high-side switch in SMPS, synchronous rectifiers and load-switching applications. It is a highly efficient and reliable N-channel MOSFET designed for compact, low-cost power switch applications.

Description

The AO6408 is an N-channel enhancement-mode vertical DMOSFET that is designed for switching applications. It is a low-cost, highly-reliable device that is suitable for handheld, space-saving, high-power applications. This device is constructed from a vertical DMOSFET structure with ESD-protection diodes for load-switching purposes. It is also provided with an on-resistance of up to 0.6 Ω and a current-handling capacity of up to 7 A. It is equipped with a logic-level enable input that allows it to operate in a single-input pin mode. It is also equipped with an undervoltage lockout circuitry that prevents the device from being turned on when the power supply voltage is too low. This helps prevent damage to the device due to low voltage. The AO6408 is fabricated from silicon on an advanced CMOS process, providing good electrical performance with a low on-resistance and high current-handling capabilities. It is also equipped with internal avalanche-protection diodes that allow it to operate in a broad range of operating temperatures.

Applications

The AO6408 is a suitable device for a wide range of applications, including but not limited to:• SMPS (switching mode power supplies)• Synchronous rectifiers• DC/DC converters• Load switches• Automotive applications• Telecom/Networking• Lighting• Industrial applications

Working Principle

The AO6408 is a high-side cavity-based lateral DMOSFET. It consists of an array of parallelly-connected channels that form the current-carrying part of the device. A gate is used to control the current through the channels and the gate is connected to an external signal to switch on or off the device.When the gate signal is at logic ‘High’, the gate-drain junction is reverse biased, and no current flows through the device. When the signal is at logic ‘Low’, the gate-drain junction is forward biased, and a conduction path is formed, allowing current to flow through the device. This allows the device to serve as a switch that can control high currents.The AO6408 is also equipped with internal ESD-protection diodes that protect the device from electrostatic discharge, such as the one produced by lightning. The diodes also prevent the device from being damaged if the device is connected to a voltage that is too high.

Conclusion

The AO6408 is a single vertical DMOSFET device typically used as a high-side switch in SMPS, synchronous rectifiers and load-switching applications. It is a highly efficient and reliable N-channel MOSFET designed for compact, low-cost power switch applications. It is equipped with a logic-level enable input and internal avalanche-protection diodes, making it suitable for a wide range of applications. Its on-resistance and current-handling capabilities make it a suitable device for high-power, low-cost switching mechanisms. The working principle of the AO6408 is based on an internal array of channels that can be controlled by a gate, allowing it to effectively switch between high and low currents.

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