Allicdata Part #: | AO6402AL_101-ND |
Manufacturer Part#: |
AO6402AL_101 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 30V 6TSOP |
More Detail: | N-Channel 30V 7A (Ta) 2W (Ta) Surface Mount 6-TSOP |
DataSheet: | AO6402AL_101 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Package / Case: | SC-74, SOT-457 |
Supplier Device Package: | 6-TSOP |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 820pF @ 15V |
Vgs (Max): | ±20V |
Series: | -- |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Rds On (Max) @ Id, Vgs: | 27 mOhm @ 7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
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.AO6402AL_101 Application Field and Working Principle
The AO6402AL_101 is a high performance P-channel enhancement mode Field Effect Transistor (FET). It has a relatively low maximum drain-source voltage (VDS) of -28V, and a drain current (ID) of -12A. It is suitable for power management applications in consumer and industrial electronic applications, as well as providing an ideal choice for general purpose switching. In this article we will discuss the application field and working principle of the AO6402AL_101.
In consumer electronics, the AO6402AL_101 can be used as a replacement for bipolar transistors, usually in more efficient switcher applications. It provides a low cost option for providing efficient power on/off control in power supplies and other power subsystems. In industrial electronic applications, the AO6402AL_101 can be used in a variety of instrumentation, power distribution and control applications. It provides a low cost alternative to the more expensive MOSFETs available for these applications.
The AO6402AL_101 is a P-channel Enhancement Mode FET. It relies on the channel created between the source and drain terminals of the device to control the current flow through the device. When a positive gate-to-source voltage (VGS) is applied, a channel is created between the source and the drain, allowing current to flow from the source to the drain. As the voltage is increased, the channel width and current flow increases. When the gate to source voltage is decreased, the channel is reduced, and eventually the channel will close and the current will stop flowing through the device.
The AO6402AL_101 operates with a Gate-Source Voltage (VGS) range of -3V to -5V. When the voltage is between -3V and -5V, the device is in the enhancement mode, and the channel is opened, allowing current to flow. The maximum drain current is -12A, and the maximum drain-source voltage (VDS) is -28V, making the device suitable for high voltage applications. The device also uses a threshold voltage (VTH) of -2V, which is the minimum voltage required to open the channel.
The AO6402AL_101 is an ideal device for a wide range of applications, including power management, consumer, industrial and instrumentation electronics. It is a low cost and reliable solution for powering a variety of applications. By understanding its operating characteristics, understanding the application field and working principle, designing circuits with the AO6402AL_101 can be done quickly and efficiently.
The specific data is subject to PDF, and the above content is for reference
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