Allicdata Part #: | AO6402L-ND |
Manufacturer Part#: |
AO6402L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 30V 5A |
More Detail: | N-Channel 30V 5A (Ta) 1.25W (Ta) Surface Mount 6-T... |
DataSheet: | AO6402L Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
Package / Case: | SC-74, SOT-457 |
Supplier Device Package: | 6-TSOP |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.25W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 310pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 6.3nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 31 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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The AO6402L is an N-channel enhancement mode MOSFET designed specifically for use in low voltage load switch applications. AO6402L is optimized for low-on-state resistance, RDS(ON), high efficiency, and high switching speeds. It operates over the full -55°C to +150°C temperature range, and is qualified for automotive applications.
The basic principle of a FET is based on the phenomenon of electron migration from n-type semiconductor to p-type semiconductor. This process is called Field Effect, which is named after the device, FET. AO6402L is a type of FET, which has a gate, drain and source. The output current is controlled by the gate-to-source voltage. AO6402L features robust silicon during protection mode and ultra-low on-state resistance for high efficiency. It has very low output capacitance for high speed switching.
AO6402L is designed for load switch applications as its low on state resistance (RDS(ON)) and low gate charge (Qg) make it ideal for this type of applications. It is primarily used to control the flow of current between two points in a circuit. To place the MOSFET in conduction mode, the gate to source voltage (Vgs) has to exceed a certain threshold voltage. It acts like a switch which can be turned on or off depending on the input signal.
The low on-state resistance of AO6402L makes it ideal for high current switching applications. Furthermore, its high switching speed reduces switching losses, allowing higher voltage and current applications than normally achievable. The MOSFET has also a very low gate charge allowing fast switching, which reduces switching losses and improves the efficiency of the connected load. Additionally, the MOSFET has an impressive dielectric strength of up to 500V.
The AO6402L can be used in many different applications where a load switch is needed. The main application areas of the MOSFET are automotive electronics and industrial control. It is especially suitable for applications with high current switching, such as controlling electric motors, power supplies and battery circuits. Due to its low on-state resistance, it can also be used in other high power applications, such as power amplifiers and switching power supplies.
In conclusion, the AO6402L is an excellent choice for low voltage load switch applications. It has a very low on-state resistance, high switching speeds and low gate charge. Its robust design allows it to operate at temperatures between -55°C to +150°C. It is also an ideal choice for high current switching applications, such as electric motors, power supplies and battery circuits.
The specific data is subject to PDF, and the above content is for reference
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