AO6409A

Vgs(th) (Max) @ Id:	900mV @ 250µA
Package / Case:	SC-74, SOT-457
Supplier Device Package:	6-TSOP
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.1W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	905pF @ 10V
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	11nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	41 mOhm @ 5.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	5.5A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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AO6409A Application Field and Working Principle

The AO6409A is an enhancement-mode NMOS (eNMOS) transistor from Aosong Electronics Co. Ltd.. This field-effect transistor (FET) is designed for use in medium to high current, low voltage switching and load switching. It is a surface-mount type device, and therefore it is suitable for microelectronics applications as it can be easily integrated onto a printed circuit board. It is also suitable for automotive applications, where it can be reliably operated in extreme conditions.

Features and Specifications

The AO6409A features a drain current of up to 3A and a breakdown voltage of up to 30V. It has an extremely low gate threshold voltage (VGS) of only -1.5 V, and its drain-source on-resistance (RDS(on)) is as low as 0.6 ohms. It operates at a temperature range of -55 °C to +125 °C, making it an ideal device for automotive applications. Additionally, it features an ESD rating of 2000V which makes it extremely robust and capable of withstanding high transient voltages.

Application Fields

The AO6409A is designed for applications requiring a high-performance load switch. Its low-voltage and low-gate threshold rating allows it to be used in applications with a power supply of up to 15 volts. It is also suited to be used as a load switch in low voltage power distribution systems, where its high current capability makes it an ideal choice.It is also suitable for automotive applications, and is commonly used as a load switch in engine control systems. Its high current capability, low gate threshold voltage, ESD rating and temperature range make it a reliable device in harsh automotive conditions. Moreover, its surface-mount characteristics make it easy to integrate into an automotive system.

Working Principle

A Field-Effect Transistor (FET) works on the principle of electric field-induced charge transfer between its source and drain terminals. A gate voltage is applied between the gate and the source terminals, creating an electric field which, when sufficient, will cause charge carriers to flow from the source to the drain. This in turn causes current to flow from the drain to the source.The AO6409A uses an enhancement-mode NMOS (eNMOS) structure, which means that the transistor is normally switched off, i.e. the source is not connected to the drain. When a negative gate-source voltage (VGS) is applied, current starts to flow from the drain to the source. The higher the negative voltage, the higher the drain-source resistance (RDS(on)) will be, making the device more efficient.In conclusion, the AO6409A is a highly reliable enhancement-mode NMOS transistor. Its low voltage, low gate threshold voltage, high current capability, temperature range and high ESD rating make it the perfect device for automotive and load-switching applications.

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