AO6403L Allicdata Electronics
Allicdata Part #:

AO6403L-ND

Manufacturer Part#:

AO6403L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET P-CH 30V 6A 6TSOP
More Detail: P-Channel 30V 6A (Ta) 2W (Ta) Surface Mount 6-TSOP
DataSheet: AO6403L datasheetAO6403L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Bulk 
Description

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AO6403L is a high performance N-Channel MOSFET with a low on-state resistance. It is designed for low voltage applications such as those found in the automotive, industrial and telecommunications industries. The AO6403L offers very high level of performance, making it an excellent choice for high-speed switching power applications. This MOSFET is extremely reliable, with a maximum operating temperature of 175°C.

The AO6403L is a N-Channel MOSFET, meaning it is designed to work on a positive gate-source voltage. It has a low on-state resistance of 40mΩ and a maximum drain-source voltage of 30V with a maximum drain current of 9 amps. This MOSFET also features a high-level of power dissipation, making it a great choice for high-speed switching applications.

The working principle of the AO6403L is based on the concept of quantum-mechanical tunneling. This means that when a voltage is applied between the source and the gate electrodes, electrons can be pushed through the different layers of insulation, forming a conducting channel between the source and drain. So when a voltage is applied, current can flow between the source and drain, allowing for the MOSFET to be used as a switch.

The AO6403L can be used in a variety of applications, such as the automotive, industrial and telecommunications industries. It is designed to be a good choice for low-voltage switching applications, as it has high levels of performance and power dissipation. It is also suitable for a wide variety of applications, such as LED lighting, power supplies, DC-to-DC converters, and motor control.

The AO6403L also has a wide range of operating temperature, making it an excellent choice for applications requiring high levels of reliability. This MOSFET also features a low on-state resistance, making it very energy-efficient. The AO6403L is a suitable choice for many different applications, such as those in the automotive, industrial and telecommunications industries.

In conclusion, the AO6403L is a high performance N-Channel MOSFET designed for low voltage applications. It has a low on-state resistance and high levels of power dissipation, making it an excellent choice for high-speed switching power applications. It is also extremely reliable and has a wide range of operating temperature, making it suitable for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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