AOD450 Allicdata Electronics

AOD450 Discrete Semiconductor Products

Allicdata Part #:

785-1566-2-ND

Manufacturer Part#:

AOD450

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 200V 3.8A TO252
More Detail: N-Channel 200V 3.8A (Tc) 2.1W (Ta), 25W (Tc) Surfa...
DataSheet: AOD450 datasheetAOD450 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 6V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2.1W (Ta), 25W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 3.82nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 700 mOhm @ 3.8A, 15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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AOD450 (also known as MTS D-24) is a type of field effect transistor (FET) for applications where high reliability and low gate source capacitance are required, such as RF and microwave applications. The AOD450 has a single gate structure, meaning it consists of one source and one drain.

AOD450 is a 4-terminal device in which the source, gate, and drain are connected by leads to the outside of the device. The gate of the AOD450 is insulated from both the source and the drain. As a result, the gate can control current both into and out of the device, enabling it to act as a switch.

The AOD450 has two operation modes: the normal and the inversion mode. In the normal mode, current can flow into the gate in order to set the desired voltage potential between the source and the drain. In the inversion mode, current is drawn out of the gate and transistor enters the enhancement mode.

The primary benefit of the AOD450 is its low gate capacitance. Due to the single gate structure, the amount of capacitance between the source and the gate is significantly reduced compared to other FETs. This is important for RF and microwave applications, where the capacitance would interfere with the signal and cause distortion.

Another feature of the AOD450 is its high breakdown voltage. This is due to the drain and the source being connected directly, meaning that the voltage between them can be much higher than what is achievable with other types of FETs.

The AOD450 is used in a variety of applications including RF amplifiers and oscillators, microwave amplifiers and mixers, as well as power supplies. These applications require high reliability, low gate capacitance, and high breakdown voltage in order to function properly.

When it comes to operation, the AOD450 follows the same principle as other FETs: the current flow between the source and the drain is controlled by the voltage applied to the gate. The voltage on the gate attracts charge carriers, which in turn create a channel between the source and the drain. The size of this channel is determined by the voltage applied to the gate, and this in turn controls the current flow between the source and the drain.

In conclusion, AOD450 is a single-gate FET with a low gate capacitance, high breakdown voltage and high reliability, making it an ideal choice for applications requiring precision and high performance. Its operation follows the same principle as other FETs, in which the current flow between the source and the drain is controlled by the voltage applied to the gate.

The specific data is subject to PDF, and the above content is for reference

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