AOD458 Allicdata Electronics

AOD458 Discrete Semiconductor Products

Allicdata Part #:

785-1353-2-ND

Manufacturer Part#:

AOD458

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N CH 250V 14A TO252
More Detail: N-Channel 250V 14A (Tc) 150W (Tc) Surface Mount TO...
DataSheet: AOD458 datasheetAOD458 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 175°C (TJ)
Power Dissipation (Max): 150W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 280 mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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AOD458 transistors are junction field effect transistors (JFETs) with a unique forward-gate voltage control. Commonly used as an amplifier, AOD458 transistors are single-junction devices that offer a low on-state resistance, low gate leakage current and low input capacitance, making them an ideal choice for a wide range of applications, including audio and video amplifiers, communication systems, power amplifiers, and low-power, high-frequency circuit designs.

The AOD458 are available in a variety of sizes and the maximum ratings are as follows: drain current, 150 mA; drain-source voltage, VGS, 20 V; and gate-source voltage, VG, 12 V. The AOD458 also features a symbol indicating infinity (∞) drain-source resistance, indicating its low-resistance capability. This high-performance device is also available in several package types, including an 8-lead dual-in-line flat-pack, an 8-lead dual-in-line flat-pack with stable gate bias, and a surface-mount package.

The AOD458 is an enhancement-mode device, requiring an externally provided gate bias voltage to turn it on. The operating principle of the AOD458 is simple, involving the transfer of an electric current (I) into the gate electrode for activation. When the gate bias voltage is applied, an electric field is created that produces an inversion (or P-type) layer in the channel adjacent to the gate electrode. This region then acts as a source of electrons, allowing a low-resistance current path between the source and drain.

The transconductance gain of the AOD458 is determined by the gate-source voltage, and the switching speed of the device is determined by the gate-bias voltage. An advantage of this device is that it can be operated at very high frequencies. The AOD458 features an output multi-path current mirror that is able to provide an accurate high current in the output circuit. This can be used to amplify and condition low-level signals, and to increase the speed of the device.

The AOD458 device is suitable for use in a wide range of applications, from low frequency amplifier circuits to high frequency high-speed power amplifiers. It is a versatile device that can be used in a variety of applications, from audio and video amplifiers to communication systems, power amplifiers, and low-power, high-frequency circuit designs. The AOD458 is also ideal for use in low-current circuits, such as digital-to-analog converters, analog-to-digital converters, serial interfaces, and line drivers.

The AOD458 is a high-performance device that offers low on-state resistance and low gate leakage current. It is an excellent choice for a wide range of applications that require high performance, low power dissipation and high speed. Many application fields and circuits can benefit from the AOD458\'s features, making it an ideal choice for high-performance design engineers.

The specific data is subject to PDF, and the above content is for reference

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