
Allicdata Part #: | AOD4136L-ND |
Manufacturer Part#: |
AOD4136L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH TO252 |
More Detail: | N-Channel 25V 25A (Tc) 2.1W (Ta), 30W (Tc) Surface... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.1W (Ta), 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 734pF @ 12.5V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 16.8nC @ 10V |
Series: | SDMOS™ |
Rds On (Max) @ Id, Vgs: | 11 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 25A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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AOD4136L is an N-channel metal-oxide-semiconductor field-effect transistor (MOSFET) created by Advancedsemi, intended for use in various digital circuits. Even though the application field for MOSFETs varies, this specific AOD4136L is especially suitable for applications requiring switch and power modes.
MOSFETs, otherwise known as field-effect transistors (FET) are a type of transistor, which can be found in a wide range of modern-day electronics. Transistors are current-controlled devices, meaning they can be used to amplify small signals up to a large power level.
The main purpose of this device is to switch or amplify signals, meaning it takes a small electrical input and changes it into a larger output, which is important in circuit designs in order to maintain power. This transistor takes an input of 5mA and can produce up to 7A in a resistive load.
The way this AOD4136L transistor works is by having an N-channel MOSFET, meaning it has an insulated gate, which controls the flow of electrons between the source and drain when a voltage is applied across the gate and the source.
The P-channel MOSFET is the opposite and is superior to the N-channel in terms of performance and switching times. When a voltage is applied to the gate, the electrons are drawn towards the source, leading to a decrease in voltage across the source and drain terminals.
In order for this effect to occur, there must be a hole trapped in the oxide layer of the gate insulator, which allows the electrons to move freely from the source to the drain. This process is known as the “gate effect.”
The AOD4136L has a gate-source voltage of ±20 volts, a drain-source voltage of 20 volts, a drain current of 7 amps, an on-resistance of 0.15 ohms, and an off-state capacitance of <0.15 pF total.
The AOD4136L is especially suitable for power applications that require a fast switch with a high-current carrying capability. It is also suitable for use in switching circuits where power dissipation safety is a concern.
Overall, this MOSFET is an excellent choice for those looking for a device that can handle high power dissipation and fast switching times, with great reliability.
The specific data is subject to PDF, and the above content is for reference
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