AOD4185L_003 Allicdata Electronics
Allicdata Part #:

AOD4185L_003-ND

Manufacturer Part#:

AOD4185L_003

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET P-CHANNEL 40V 40A TO252
More Detail: P-Channel 40V 40A (Tc) 62.5W (Tc) Surface Mount TO...
DataSheet: AOD4185L_003 datasheetAOD4185L_003 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 62.5W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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AOD4185L_003 is a common type of metal oxide semiconductor field effect transistor (MOSFET) and falls under the category of single FETs. It is mainly designed for general power switching and amplification applications.

As with other FETs and MOSFETs, AOD4185L_003 consists of three gates, source, drain and gate. The source and drain electrodes are utilized for charge injection and transportation, whereas the gate electrode is utilized to control the flow of electrons. The current flow in the device is governed by electric field generated by the gate voltage. This makes it act as an analog switch. With minor electrical perturbations, the device can be switched from off to on state and vice versa, making it ideal for power switch applications.

The working principle of AOD4185L_003 can be explained using the concept of capacitance. When a voltage is applied across the source and drain terminals, a small electric field is induced that causes the electrons to move from the source to the drain. This is known as the depletion region and is formed when the source, drain and gate areas of the device all have the same polarity. The electric field generated by the gate voltage affects the amount of current that passes through the channel by changing the capacitance of the device.

When a voltage is applied to the gate terminal, electrons are attracted more towards the gate terminal and the device creates an inversion layer in the channel region. This causes the current flow to increase, enabling the device to act as an amplifier. On the other hand, when no voltage is applied, the SiO2 barrier depletes, causing the inversion layer to disappear and the device to switch off. This makes AOD4185L_003 ideally suited for applications that require high current gain, such as motor control systems, power supply units and general switching operations.

Due to its very low on-resistance and ability to switch and amplify, the AOD4185L_003 has found its way into a variety of applications. These include motor control applications such as air conditioning systems and industrial automation. The device has also seen increasing usage in consumer electronics such as televisions, DVD and Blu-ray players, and audio equipment. Moreover, it is also found in power supplies, amplifier circuits and mobile phone baseband chips.

As can be seen, the AOD4185L_003 is a highly capable MOSFET that is suitable for a wide range of applications. Its low on-resistance, fast switching capabilities and easy operation makes it an ideal choice for both power switching and amplification applications.

The specific data is subject to PDF, and the above content is for reference

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