
Allicdata Part #: | AOD4186-ND |
Manufacturer Part#: |
AOD4186 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 40V 10A TO252 |
More Detail: | N-Channel 40V 10A (Ta), 35A (Tc) 2.5W (Ta), 50W (T... |
DataSheet: | ![]() |
Quantity: | 1000 |
Specifications
Vgs(th) (Max) @ Id: | 2.7V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 15 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta), 35A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Description
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AOD4186 Application Field and Working Principle
The AOD4186 is a single N-channel enhancement-mode Field Effect Transistor (FET) designed to deliver power, both in low and high end applications. It is manufactured using advanced field effect transistor technologies with very low threshold characteristics. This transistor is suitable for applications such as power management, motor controller, and switching power supplies.The AOD4186 is composed of two elements: the gate and the drain. The gate is the input of the transistor and acts as a switch, allowing current to flow or not when the gate is activated or not. The drain is the output of the transistor, where the current flows through after passing the gate.The AOD4186 utilizes an N-channel enhancement-mode FET structure. This FET contains a number of positive and negative terminal switches. When a positive voltage is applied to the gate, it contacts the bottom of the FET structure and electrons in the channel at the P Part (n-channel) are attracted toward the gate terminal. This attracts the electrons in the channel, inducing a current through the channel. This in turn increases the channel conductivity and allows current flow from the P to the N parts of the FET, based on applied voltage. On the other hand, when the gate voltage is negative, the channel current is decreased, and the FET is blocked.The AOD4186 offers very low on-state resistance, and thus can achieve a high power gain in high end applications, making it ideal for switching applications such as motor controllers, battery chargers and DC-DC converters. Due to the low input capacitance of the AOD4186, switching speeds of up to 10MHz is achieved.The AOD4186 has a temperature range up to 150°C and operating voltage range up to 50V. This makes it suitable for high power applications, as the FET can function in extreme temperatures and voltage conditions.The AOD4186 is an ideal device for switching power supplies, motor controllers, and other power management applications. The low on-state resistance and high power switching capabilities make it an efficient and reliable power switching device. The low input capacitance and high temperature rating make the AOD4186 suitable for high power applications.The specific data is subject to PDF, and the above content is for reference
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