| Allicdata Part #: | 785-1351-2-ND |
| Manufacturer Part#: |
AOD4189 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET P-CH 40V 40A TO252 |
| More Detail: | P-Channel 40V 40A (Tc) 2.5W (Ta), 62.5W (Tc) Surfa... |
| DataSheet: | AOD4189 Datasheet/PDF |
| Quantity: | 1639 |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | TO-252, (D-Pak) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta), 62.5W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1870pF @ 20V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 41nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 22 mOhm @ 12A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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AOD4189 is a 210 V N-channel enhancement-mode power field effect transistor (FET) designed to replace discrete power MOS FET. It\'s designed to provide high performance in demanding switching applications. The AOD4189 device combines the low on-resistance and high speed of power MOSFETs with the low input capacitance of a typicalJFET. This combination offers excellent performance in high frequency switching applications.
Applications
AOD4189 can be used in a number of applications including:
- Low Side Switching (including LED drivers)
- Power Supplies
- DC-DC converters
- Motor Drive Circuits
- High Side Switches
- High-side Current Limiters
Features
The AOD4189 offers a number of features that make it an attractive choice for high-performance switching applications. These features include:
- Low gate charge compared to competing MOSFETs of similar gate charge ratings
- Low input capacitance
- High frequency operation (up to 10 MHz)
- Very low on-resistance
- 200V drain-source breakdown voltage
- Low power losses
- Easy to integrate into existing designs
Working Principle
AOD4189 is an N-channel enhancement-mode power field effect transistor (FET) which is used for controlling the flow of electrons in high power applications. The working principle behind AOD4189 is relatively simple – a voltage is applied to the gate terminal which creates a conductive channel between the source and drain terminals. The electrons are then able to travel across this channel and are therefore able to move to the drain terminal. Depending on the voltage applied to the gate, the current between the source and drain terminals can be adjusted allowing the device to be used as a switch.
AOD4189 is designed to have high current handling capabilities compared to competing MOSFETs, as well as low input capacitance and very low gate charge. This combination of features makes it an ideal choice for high frequency switching applications as it can handle more current and reduce power losses. Furthermore, the low input capacitance makes it suitable for switching applications which require high switching speed.
The specific data is subject to PDF, and the above content is for reference
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AOD4189 Datasheet/PDF