Allicdata Part #: | 785-1107-2-ND |
Manufacturer Part#: |
AOD442 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 60V 38A TO-252 |
More Detail: | N-Channel 60V 7A (Ta), 37A (Tc) 2.1W (Ta), 60W (Tc... |
DataSheet: | AOD442 Datasheet/PDF |
Quantity: | 22500 |
Vgs(th) (Max) @ Id: | 2.7V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.1W (Ta), 60W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2300pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 68nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Ta), 37A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The AOD442 transistor is a type of metal oxide semiconductor field effect transistor (MOSFET). It is a single gate MOSFET, which means that it consists of one active electrode and two electrical terminals that supply the voltage. The AOD442 is composed of a 5 nanometer gate oxide layer and a 20 nanometer channel length. The gate oxide layer acts as an insulator, preventing current from flowing through it and allowing only a certain amount of voltage to pass through it. The operating voltage of the AOD442 can range from -20 volts to +20 volts, making it a suitable transistor for use in a wide range of applications.
Due to its small size, the AOD442 is often used in low power applications, such as low frequency audio applications, or in low voltage DC/DC converters. It is also used in applications where a low power density is desired, such as sensors and digital signal conditioning circuits.The main benefits of using the AOD442 are its low powerconsumption, low power density, and small size. It also offers reliable performance in low voltage applications, with a good temperature range. This means that it is a suitable choice for a wide range of applications.The AOD442 works by acting as a switch to control the flow of electrical current between its source and drain terminals. When the gate voltage is applied, the MOSFET is “on” and current can flow between the terminals. Conversely, when the gate voltage is removed, the MOSFET is “off” and no current can flow. This is because the gate oxide layer acts as an insulator, preventing current from flowing through it. In this way, the AOD442 can act as a switch to regulate the flow of electrical current.The AOD442 can also be used as an amplifier to amplify or attenuate an electrical signal. When the gate voltage is applied, it creates a channel between the source and drain, allowing current to flow. This current creates an electrical field, which then affects the voltage at the gate, amplifying or attenuating the input signal.In summary, the AOD442 is a single gate MOSFET which is suitable for use in a wide range of applications, due to its low power consumption, low power density, and small size. It works by acting as a switch to control the flow of electrical current, and it can also be used as an amplifier to amplify or attenuate an electrical signal. It is an ideal choice for use in low power applications, such as low frequency audio applications, or in low voltage DC/DC converters.
The specific data is subject to PDF, and the above content is for reference
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