
Allicdata Part #: | 785-1113-2-ND |
Manufacturer Part#: |
AOD480 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 30V 25A TO-252 |
More Detail: | N-Channel 30V 25A (Tc) 2.5W (Ta), 21W (Tc) Surface... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 21W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 820pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 23 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 25A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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AOD480 is an advanced high-performance metal-oxide-semiconductor field-effect transistor (MOSFET) technology developed by Advanced Semiconductor Corporation. It is optimized for use in power amplifiers and power supplies with superior switching performance and ultra-low on-resistance. It is a dual-gate complementary MOSFET that is designed to minimize both gate charge and total gate-drain capacitance for optimal performance, even at higher switching speeds.
AOD480 technology has been developed to provide higher switching current, higher power dissipation, lower switch-on resistance and higher safe operating area (SOA) to ensure better reliability and power conversion efficiency. Its features make it an ideal choice for applications such as high-frequency DC-to-DC converters, high power radio frequency (RF) amplifier circuits, high-voltage switching, and audio amplifiers.
AOD480-based circuits offer superior performance in comparison to conventional MOSFET-based designs. Since the AOD480 is a dual-gate device, it provides excellent gate charge and total gate-drain capacitance reduction. This leads to improved switched transient response and higher power supply efficiency.
The working principle of AOD480 is based on two processes - the gate-channel-drain-process (GCD) and the low-voltage-switch-on-process (LVSO). This makes the device suitable for use in different types of circuits. In the GCD-process, electrons and holes are injected into the channel due to the flow of current between the gate and the source. This causes the channel width to widen and eventually lead to a decrease in the gate-drain capacitance. In the LVSO-process, the device turns on when the gate voltage becomes lower than the threshold voltage. This reduces the gate charge and improves the switch-on characteristics.
The AOD480 offers a wide range of benefits to the power supply design including improved power dissipation, reduced EMI noise and improved hot-switching capability. Additionally, its small physical size helps to reduce the magnetic stray field as well as improves the system\'s heat management characteristics. Furthermore, due to its low on-resistance and low turn-on threshold voltage, it provides increased power conversion efficiency and improved system reliability with low cost.
In conclusion, the AOD480 is an advanced MOSFET technology that provides superior switching performance and ultra-low on-resistance. It is suitable for applications such as high-frequency DC-to-DC converters, high power RF amplifier circuits, high-voltage switching and audio amplifiers. Its features make it an ideal choice for high performance power supply designs. Its working principles are based on the GDC and LVSO processes that enable the device to switch on and off faster and provide higher efficiency. The AOD480 is a cost-effective solution that is sure to provide improved power supply converter efficiency and system reliability.
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