| Allicdata Part #: | AOD4TL60-ND |
| Manufacturer Part#: |
AOD4TL60 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET N-CH DPAK |
| More Detail: | |
| DataSheet: | AOD4TL60 Datasheet/PDF |
| Quantity: | 1000 |
| Series: | -- |
| Part Status: | Obsolete |
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AOD4TL60, also referred to as a single level static N-Channel MOSFET, is a type of field effect transistor (FET) which has three terminals, source, gate, drain. This N-Channel MOSFET has high power handling capability and low on-state losses due to its high input impedance, high thermal dissipation and high switching speeds. It also exhibits low power dissipation, making it ideal for low power applications.
AOD4TL60 is used primarily in electronic control circuitry, such as in electronic temperature controllers, switch mode power supplies, voltage multiplier circuits and light dimmers. It can also be used in other high power applications such as motor control, DC-DC converters and high frequency applications. This MOSFET is also used in various other applications that require high efficiency and low power dissipation.
The AOD4TL60 has two types of gate connections: single gate and dual gate. A single gate connection consists of two pins that are connected to the gate and the source. This connection provides an electric charge to the gate and the electric current flows mostly in one direction. Dual gate connections provide two separate charges that allow the current to flow in both directions. This allows the user to control the amount of current that flows through the MOSFET.
The working principle of the AOD4TL60 is based on the fact that the electric potential applied between the gate and the source causes a change in the conduction through the channel region of the MOSFET. The current flowing through the channel increases as the voltage applied between the gate and the source increases. The current flow through the channel region of the MOSFET is controlled by the voltage applied between the gate and the source. The higher the voltage applied between the gate and the source, the more current can be conducted through the MOSFET.
This MOSFET has a maximum rated voltage of 60 volts and a maximum continuous current of 14 amperes. It also has a maximum power dissipation of 500 watts. This makes it ideal for applications that require large amounts of current at low voltages. Because the AOD4TL60 has such a high current-handling capability, it is also well-suited for applications that require a high power output.
Because the AOD4TL60 has high switching speeds, it is often used in applications where fast switching is required. This makes it ideal for applications that involve digital signal processing, such as in the automotive and telecommunications industries. It also makes it suitable for applications involving high-speed switching such as in power supplies, inverters and converters.
In summary, AOD4TL60 is a type of single-level static N-channel MOSFET with high power handling capability and low on-state losses. It is ideal for applications that require high efficiency and low power dissipation. It can be used in various applications, such as electronic temperature controllers, switch mode power supplies, voltage multipliers, and light dimmers. Additionally, it is suitable for high frequency applications that require fast switching. It has a maximum rated voltage of 60 volts and a maximum continuous current of 14 amperes. Therefore, the AOD4TL60 is a highly versatile and capable FET suitable for a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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AOD4TL60 Datasheet/PDF