AON2401 Allicdata Electronics
Allicdata Part #:

785-1423-2-ND

Manufacturer Part#:

AON2401

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET P-CH 8V 8A 6DFN
More Detail: P-Channel 8V 8A (Ta) 2.8W (Ta) Surface Mount 6-DFN...
DataSheet: AON2401 datasheetAON2401 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 650mV @ 250µA
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: 6-DFN-EP (2x2)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.8W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 4V
Vgs (Max): ±5V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 22 mOhm @ 8A, 2.5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Drain to Source Voltage (Vdss): 8V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The AON2401 is a single-channel, integrated Trench MOSFET which can be used in a variety of industrial, medical and consumer applications. This device is provided in a very small package and is suitable for high-temperature operation. The AON2401 is an enhancement-mode MOSFET that operates over a wide temperature range and offers high power efficiency, low noise and low power consumption. It has a low RDS(ON) and low gate charge. In addition, the device offers high ESD protection.The AON2401 MOSFET is ideal for use in both large and small applications including power switches, gate drivers, small synchrophones, high-efficiency synchronous boost converter, step-down switching regulators, inverters and magnetic field applications.The device utilizes Trench MOSFET technology, which allows for superior thermal management when compared to its traditional planar counterparts. The technology provides for more efficient use of available space, allowing for the device to be thinner than a traditional planar device. The device also has a low-capacitance C-V characteristic, making it suitable for high frequency applications. The AON2401 MOSFET has an integrated gate-driver that allows for a fast, efficient switching of the device. A fast switching response enables the device to handle high current and high frequency pulsewidth modulation. The gate driver also provides precision control over the gate switching speed and can be used to control the power-up and power-down profiles. The device also features an enhanced breakdown voltage rating (VBR) of 80V which is suitable for many applications that require more than 25V. The AON2401 has internal thermal protection features which provide added safety. In addition, the device has internal ESD protection which prevents damage from electrostatic discharge events. The AON2401 device also has a wide range of operating temperature limits, which allow for its use in many applications including consumer, automotive, and industrial. The device can withstand temperatures as low as –55°C and as high as +150°C. This makes it suitable for applications such as automotive, industrial and consumer electronics. The working principle of the AON2401 is based on the principles of the field-effect transistor (FET). The device is composed of two main components: a gate and a source. The gate is the controlling element, while the source is the electrically conductive channel through which current flows. When voltage is applied to the gate, it modulates the width of the channel, allowing current to flow from the source to the drain. This principle allows for efficient and fast switching of the device and is suitable for use in high frequency applications.In conclusion, the AON2401 is a single-channel, integrated Trench MOSFET which provides low RDS(ON), low gate charge, high ESD protection, high power efficiency and low power consumption for a variety of industrial, medical and consumer applications. Its fast switching response combined with its wide temperature range and enhanced breakdown voltage make it a suitable choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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