AON2701L#A Allicdata Electronics
Allicdata Part #:

AON2701L#A-ND

Manufacturer Part#:

AON2701L#A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET P-CH 20V 3A 6DFN
More Detail: P-Channel 20V 3A (Ta) 1.5W (Ta) Surface Mount 6-DF...
DataSheet: AON2701L#A datasheetAON2701L#A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-DFN (2x2)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
FET Feature: Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 120 mOhm @ 3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Bulk 
Description

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The AON2701L#A is a 30V, 0.6A, Ultra Small single P-Channel Enhancement Mode Field Effect Transistor (FET) from the Advanced On-Line (AON) product family from Alpha & Omega Semiconductor (AOS). The device is a very small, low-cost, high performance, logic-level FET that is ideal for switching applications with very low on-state resistance (RDS(ON)) such as load switches, DC/DC converters and general purpose off/on switches.

The Ultra Small format reduces the footprint of the FET offering a great deal of design flexibility and providing greater than 90% board space savings. This improved design flexibility includes the ability to reduce PCB size and power consumption, increase functionality and make room for more features. The AON2701L#A has a maximum operating temperature range of -55°C to 150°C and an operating voltage range of -2.2V to 30V.

The AON2701L#A offers several advantages over traditional transistors such as faster switching speeds, lower conduction losses, smaller size and higher efficiency. This device is designed to reduce the on-state resistance using proprietary charge-balance technology and features a very low maximum RDS(ON) down to 4.2mΩ. This allows for very low power losses and increases the efficiency of systems that use this FET.

The AON2701L#A is based on the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) technology, which allows it to operate with very low gate-source threshold voltage (VGS(TH)) of only 0.25V. This low VGS(TH) allows for lower power consumption and increased design flexibility. In addition, this FET has an integrated ESD protection structure which provides excellent electrostatic discharge (ESD) robustness. This ensures that the device is robust to any ESD stress that may occur, making it suitable for a wide variety of applications.

The AON2701L#A is offered in the UDFN (ultra-thin dual flat no-lead) package form, providing an excellent surface-mount form factor for mounting in a wide variety of applications. The device also features an integrated source-contact-connection which helps to reduce PCB design complexity and facilitates automated assembly processes.

In summary, the AON2701L#A is an Ultra Small single P-Channel Enhancement Mode FET that is ideal for switching and DC/DC converter applications. Its small form factor and low on-state resistance make it a great power management solution. With its ultra-low threshold voltage and ESD robustness, this device can also be utilized in a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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