AON2705_001 Allicdata Electronics
Allicdata Part #:

AON2705_001-ND

Manufacturer Part#:

AON2705_001

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET P-CH W/DIO 6DFN
More Detail: Surface Mount 6-DFN (2x2)
DataSheet: AON2705_001 datasheetAON2705_001 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: *
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Mounting Type: Surface Mount
Supplier Device Package: 6-DFN (2x2)
Package / Case: 6-WDFN Exposed Pad
Description

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AON2705 is an enhancement mode, N-channel vertical double diffused metal oxide field effect transistor (V-DMOSFET) developed by Alpha & Omega Semiconductor. It is an innovative device with high cell density and ultra-low RDS(on). The product design is based on trench-gate process and non-punch-through (NPT) technology.

The AON2705 has been designed specifically to provide market leading performance when used as high-voltage analog switches and power switches in general. It is designed to be used on power MOSFETs, especially engines, and can be used in various other applications.

The working principle of the AON2705 is based on the basic principles of FETs. The device is composed of an N-type channel and a gate. When a gate bias voltage is applied, this voltage creates an electric field in the channel which helps in controlling the flow of current from the Drain to the Source. In case of the AON2705, this gate bias voltage has to be between 10V to 40V for it to work properly.

One of the key applications of the AON2705 is in Switch-Mode Power Supplies (SMPS). This device integrates the two-MOSFET structure for a single switch in one package, reducing the number of termination points and parasitic components, thus improving efficiency. The AON2705 allows more power delivery to the load and has a larger RDS (On) while consuming less power.

The AON2705 can also be used in inverters and motor drives, where it can be used as a three-phase inverter switch and angle switch. The device’s low RDS (ON) results in increased efficiency and fewer losses, while its higher current and power delivery capabilities make it suitable for powering large motors. The device also improves system reliability and reduces thermal stress due to its drain-source breakdown voltage of 600V.

The AON2705 is also used in LED drive applications. The device’s low ON-resistance, low gate charge, and wide input voltage range make the device ideal for applications which require higher efficiency. The device’s higher current and power delivery capabilities also make it suitable for driving high power LEDs.

The AON2705 is also used in voltage regulator modules (VRM). The device is used in this application to control the output voltage of the VRM, thus allowing for higher power density and improved efficiency. The device also provides for control of the drain current and better protection against short circuits.

In summary, the AON2705 is an innovative V-DMOSFET device which provides excellent performance when used in a variety of applications. It is designed to work with a wide input voltage range and offers excellent power delivery capabilities. Furthermore, its low RDS (ON) results in increased efficiency and fewer losses. Thus, the AON2705 is an ideal device for power MOSFETs, SMPS, inverters, motor drives, LED drives and VRMs.

The specific data is subject to PDF, and the above content is for reference

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