AON2409 Allicdata Electronics
Allicdata Part #:

785-1395-2-ND

Manufacturer Part#:

AON2409

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET P-CH 30V 8A 6DFN
More Detail: P-Channel 30V 8A (Ta) 2.8W (Ta) Surface Mount 6-DF...
DataSheet: AON2409 datasheetAON2409 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: 6-DFN-EP (2x2)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.8W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 32 mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The AON2409 is a single n-channel field-effect transistor (FET) designed to be used in a variety of applications. It is an advanced structure FET with low on-resistance, high uniformity and fast switching speeds. It is well suited for low voltage application that require high switching speed, such as those found in low power and battery operated systems. The AON2409 provides superior performance compared to other FETs and is a reliable, cost effective choice for many applications.

The AON2409 is constructed using a standard metal-oxide semiconductor (MOS) structure consisting of two metal-oxide layers sandwiched between two ultra-thin gate oxide layers. The metal oxide layers act as a barrier that prevents the transmission of electrons, while the ultra-thin gate oxide layer enables the transistor to be easily switched on or off. This structure allows for the AON2409 to remain in its low-resistive state until it is required to switch off when a negative voltage is applied to the gate of the device.

The AON2409 offers a wide range of benefits compared to other FETs, including its low on-resistance and high uniformity across the channel. The low on-resistance of the AON2409 allows for efficient energy transfer from the FET, reducing energy loss and improving performance. Additionally, its high uniformity across the channel makes it ideal for applications requiring high switching speeds as it ensures that all switches remain in their low resistive state when in use.

The working principle of the AON2409 is relatively straightforward. When the gate voltage is high, the device is in its low resistive state, allowing current to flow through the channel. When the gate voltage is reduced and becomes negative, the device is switched off and the current stops flowing. Once it is switched off, the gate must remain in its negative voltage state in order to keep the device off.

In conclusion, the AON2409 is a highly efficient, low power and versatile FET, designed to be used in a large variety of applications. It is ideal for applications that require high switching speeds, low power consumption and small form factor. The AON2409 provides superior performance compared to other FETs and is a cost effective choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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