AON2707_001

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AON2707_001 is a single-gate Field Effect Transistor (FET) built on a fully depleted silicon-on-insulator (FDSOI) wafer. It features very low on-resistance, extremely good low-power characteristics, and very good temperature stability. With the highly efficient gate capacitance, the AON2707_001 serves as a cost-effective solution for various load switching, level shifting, and output stage applications.

AON2707_001 is crafted to include a 600 mΩ minimum RDS_ON to enable faster transitions and lower power losses. It also has a built-in 3.3 V ± 10 % gate drive voltage, making it compatible for systems with a 3.3 V power supply, or any other compatible systems. The on-state resistance is temperature stable, making AON2707_001 suitable for use in a wide range of temperatures.

The device supplies low gate charge which helps to reduce power dissipation, and a low SOA (safe operating area) which helps to ensure long-term reliability and smooth operation. The device also has an advantage over other conventional lateral FETs in that it is a low-cost, low-power, high-performance solution that is capable of operating up to 80°C ambient temperatures.

The fundamental working principle of a FET is based on the phenomenon of channel formation in the conducting channel when a voltage is applied to field effect terminals. AON2707_001 utilizes this principle of operation when it is used in various applications. It employs a metal-oxide-semiconductor (MOS) structure to create an insulated-gate field-effect transistor structure. The structure consists of an insulated gate (IG), an N-type source (S) region, and a P-type drain (D) region. Source and drain sites are typically connected via an insulated gate. The current flowing between the two terminals can be regulated by controlling the voltage applied to the insulated gate.

The FET works by controlling the number of charge carriers produced in the N-type channel by the application of a voltage to the insulated gate. When the voltage applied across the insulated gate becomes larger than the threshold voltage, the FET begins to conduct; meaning that electrons in the channel will start to move from the source to the drain. This current passing between the two terminals is what is known as the drain-source current (ID). Any changes in the gate voltage will cause changes in the ID, which allows the FET to control the current flow between the source and the drain.

AON2707_001 devices make use of this principle to perform its various tasks. It can be used both as a switch and as an amplifier, depending on the specific application. When used as a switch, it is typically used to control the flow of current between two conductors in a circuit. When used as an amplifier, the FET helps to amplify signals by modulating the drain-source current in order to control the input and output voltages.

AON2707_001 can be used in a wide range of applications due to its versatility. It is ideal for use in low-power circuits, such as those used in power management systems and LED drivers. Its temperature stability and low on-resistance also make it suitable for use in communication applications, including data transmission and high-speed switching. It can also be used for level shifting circuits and for RF applications such as transmitters and receivers.

In summary, AON2707_001 is a single-gate FET built on FDSOI wafer and offers excellent low-power performance and temperature stability. It has a very low RDS_ON, with a low gate charge and a wide SOA. It can be used in a variety of applications, including load switching and level shifting, power management systems and LED drivers, and communication and RF applications.

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