AON2420

Vgs(th) (Max) @ Id:	2.2V @ 250µA
Package / Case:	6-UDFN Exposed Pad
Supplier Device Package:	6-DFN-EP (2x2)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.8W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	552pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	12nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	11.7 mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	8A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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AON2420 is a popular single-channel single-gate logic MOSFET produced by Taiwan AOS. It is a low-threshold voltage enhancement-mode MOSFET used in many applications. This transistor is widely used in many applications due to its low·on·resistance and high·voltage·tightrope operation characteristics.The AON2420 MOSFET is typically used for power conversion, switching power supplies, DC/DC converters, and battery charging and discharging control. The main applications include DC motor driver, home appliance power switch, intelligent lighting and LED driver. In addition, it can also be used in low-power LED lighting, equalization, active clamping snubber, ultrafast rectification and other applications. The AON2420 can be used in 200 V or higher voltage input and is specially designed for working in the voltage range between 17 V and 30 V.The working principle of the AON2420 MOSFET is based on the MOSFET basic structure. It is constructed using a single gate which allows for the control of either the source or the drain. This type of transistor is generally used for power amplifying and conversion, and when the proper gate voltage is applied to its gate , the current from the drain to the source is controlled by the gate voltage. When its gate gets the necessary voltage, its channel is opened, allowing current to flow from source to drain.In addition, the AON2420 MOSFET has a low resistance and low gate threshold voltage. Its breakdown voltage is typically between 1700 V and 5000 V, which makes it ideal for voltage conversion applications. The single-gate MOSFET also has low gate capacitance, which helps minimize switching losses. Furthermore, it has a high channel mobility, enabling higher current ratings while maintaining low on-resistance and high voltage tightrope operation.To sum up, the AON2420 MOSFET is a low-threshold voltage single-gate CMOS device that is highly suitable for applications in power conversion, switching power supplies and battery charging and discharging. Its low on-resistance and high voltage tightrope operation make it an ideal choice for such application due to its ability to minimize switching losses. Additionally, its relatively low gate capacitance and high channel mobility further enhance its performance in voltage conversion applications.

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