| Allicdata Part #: | 785-1394-2-ND |
| Manufacturer Part#: |
AON2408 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET N CH 20V 8A DFN 2x2B |
| More Detail: | N-Channel 20V 8A (Ta) 2.8W (Ta) Surface Mount 6-DF... |
| DataSheet: |  AON2408 Datasheet/PDF |
| Quantity: | 9000 |
| Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
| Package / Case: | 6-UDFN Exposed Pad |
| Supplier Device Package: | 6-DFN-EP (2x2) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.8W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 782pF @ 10V |
| Vgs (Max): | ±12V |
| Gate Charge (Qg) (Max) @ Vgs: | 7nC @ 4.5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 14.5 mOhm @ 8A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 8A (Ta) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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AON2408 is a single n-channel metal-oxide semiconductor field-effect transistor (MOSFET) from AOS. It is an advanced power MOSFET that meets the requirements of modern power switching systems. The device features a wide range of gate drive characteristic, excellent power dissipation capabilities and fast turn-off. It can handle large current applications.
AON2408 is designed to offer reliable gate control, low gate charge, low gate-source threshold voltage, and high avalanche breakdown capability. It also provides a low on-resistance and low temperature’s coefficient of on-resistance (RDS(ON)). The device is widely used in battery chargers, converters, DC/DC and AC/DC converters, and switch mode power supplies (SMPS).
AON2408’s working principle is based on a source, drain, gate structure. A gate voltage is passed through the source and drain and when it is high enough, the current starts to flow from source to drain. The on-state resistance of this transistor is defined by the resistance of the entire channel, which is adjustable by adjusting the gate voltage. When the gate voltage is low, the current passage stops.
The AON2408 is highly efficient with low turn-on and turn-off time and excellent RDS(ON) and Qg characteristics. This makes it ideal for high frequency switching and power switching applications. Additionally, the high on-state current carrying capacity ensures reliable operation and offers robustness against short-circuits. The device also provides tight tolerance of VGS and Vth, which helps in providing excellent process yields.
In summary, AON2408 is a versatile power MOSFET designed for high frequency and power switching applications. The device offers advanced gate control, low gate charge, low gate-source threshold voltage, low on-resistance and high avalanche breakdown capability. It is an efficient transistor capable of handling large current applications that require high frequency switching.
The specific data is subject to PDF, and the above content is for reference
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