AON2403

Vgs(th) (Max) @ Id:	900mV @ 250µA
Package / Case:	6-UDFN Exposed Pad
Supplier Device Package:	6-DFN-EP (2x2)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.8W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1370pF @ 6V
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	18nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	21 mOhm @ 8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	8A (Ta)
Drain to Source Voltage (Vdss):	12V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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AON2403 is a next-generation, low-voltage, low-capacitance, ESD-protected, single N-channel MOSFET device, which is designed to uphold the trend of setting higher performance goals and improving the user experience in the markets of consumer electronics and portable communications. The AON2403 is the smallest available discrete n-channel MOSFET device, with a die size of 0.24 mm2, which makes it the ideal choice for space-constrained designs such as those with ultra-thin laptops, tablets and smartphones.The AON2403 offers a wide range of applications, from selecting ESD protection for data lines on consumer electronic devices, to PMIC functions for battery-powered devices. As a high-speed logic-level MOSFET, it is also ideal for DC policies used in MCUs and FPGAs. With its excellent on-resistance, low RDS (on) and Ultrafast turn-on/off speeds, it can replace the need for driver ICs, such as those used in switching mode power supply (SMPS) controlllers and low voltage communication interface ICs.The AON2403 features a maximum drain-source on-resistance of 0.65 Ω, and a typical drain-source breakdown voltage of 12 V. This makes it an excellent choice for low voltage applications where a low on-resistance is required. It also features a low gate charge (Qg) of only 4.5 nC, which is suitable for applications requiring fast turn-on speeds. In addition, it has an Electrostatic Discharge (ESD) of up to 2 kV, which helps to protect sensitive electronic components from damage caused by accidental charging of the device. This is especially important for USB and other high-speed digital I/O systems.The working principle of AON2403 involves the source terminal of the MOSFET being connected to the source voltage of the load, the drain terminal being connected to the drain voltage of the load, and the gate connected to the low-voltage control logic of the device. When a logic level signal is applied to the gate, the resulting voltage generates a small electric field in the MOSFET’s conductive channel. This electric field allows electrons to move between the source and the drain, thereby allowing current to flow between the two terminals. This current allows the load attached to the device to be controlled.In conclusion, the AON2403 MOSFET is a versatile, low-voltage, low-capacitance, ESD-protected, single N-channel MOSFET ideal for a wide range of consumer electronic, portable communication and automotive applications. Its small die size and lower capacitance enable smaller devices and higher speeds, while its on-resistance, RDS(on) and ESD ratings make it the perfect choice for consumer, industrial, and automotive designs.

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