Allicdata Part #: | AON4407_003-ND |
Manufacturer Part#: |
AON4407_003 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET P-CH 12V 9A 8DFN |
More Detail: | P-Channel 12V 9A (Ta) 2.5W (Ta) Surface Mount 8-DF... |
DataSheet: | AON4407_003 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 850mV @ 250µA |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | 8-DFN (3x2) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2100pF @ 6V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 9A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Ta) |
Drain to Source Voltage (Vdss): | 12V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
AON4407_003 is a high-speed single n-channel maximum efficiency MOSFET which is specifically designed for low on-resistance and low gate charge applications. It is made using superior chip fabrication techniques, with a remarkable miniaturized P-channel MOSFET that is integrated into an advanced surface mount package. It is ideal for use in a wide range of applications where high current switching is required, including mobile phones, portable data storage devices, digital TVs, LCDs and other consumer electronics.
The AON4407_003 has a very low on-resistance of just 2.2 milliohms which allows it to switch quickly and easily with minimum power loss. This MOSFET is also designed to minimize the switching noise which makes it a great choice for low noise system designs for applications that require a signal-to-noise ratio. Its maximum efficiency further reduces power loss due to the device\'s increased ability to store more energy than other traditional transistors.
The working principle of the AON4407_003 relies on the n-channel configuration. The n-channel is a type of electronic device configuration which comprises of an n-type semiconductor substrate with an n-type doping material. This doping material is used to create a highly conductive channel through the semiconductor substrate. The majority carriers of an n-channel are electrons and their relative mobility is higher than the holes. This arrangement of the n-channel allows it to switch quickly and easily due to the electron\'s high mobility.
When the voltage applied to the gate (G) of the MOSFET increases, electrons are attracted and go through the channel. This leaves positively charged holes in the area of the source (S) and the drain (D). As a result, current is able to flow through the channel controlled by the voltage applied on the gate. When the voltage at the gate is lowered, the electrons are repelled and the hole is filled, thus closing the current path and stopping the current flow.
The AON4407_003 can be used in a wide range of applications. It can be used in switching power supplies for high-frequency DC to DC conversion, it is ideal for use in high frequency lighting ballasts and can be used in audio amplifiers for low noise switching. It is also suitable for voltage regulation and gate control in power factor correction. Furthermore, this MOSFET can be used in automotive applications, such as DC-DC conversion, direct line-start motor control, engine control systems, and fuel injection systems.
The AON4407_003 is a powerful MOSFET that is well suited for a wide range of applications. Its low on-resistance, high maximum efficiency, and low switching noise make it one of the best solutions for high frequency, high current switching applications. This device is also particularly useful in automotive applications where high frequency, low noise switching is required.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
AON4420 | Alpha & ... | -- | 1000 | MOSFET N-CH 30V 10A SFN3X... |
AON4407_003 | Alpha & ... | 0.0 $ | 1000 | MOSFET P-CH 12V 9A 8DFNP-... |
AON4407L_002 | Alpha & ... | 0.0 $ | 1000 | MOSFET P-CH 12V 9A 8DFNP-... |
AON4407L_003 | Alpha & ... | 0.0 $ | 1000 | MOSFET P-CH 12V 9A 8DFNP-... |
AON4421_001 | Alpha & ... | 0.0 $ | 1000 | MOSFET P-CH 30V 8A 8DFNP-... |
AON4705L | Alpha & ... | 0.0 $ | 1000 | MOSFET P-CH 20V 4AP-Chann... |
AON4407L | Alpha & ... | -- | 1000 | MOSFET P-CH DFNP-Channel ... |
AON4605_002 | Alpha & ... | 0.0 $ | 1000 | MOSFET N/P-CH 30V DFN |
AON4605 | Alpha & ... | -- | 1000 | MOSFET N/P-CH 30V 4.3A/3.... |
AON4807 | Alpha & ... | -- | 1000 | MOSFET 2P-CH 30V 4A 8DFNM... |
AON4605_001 | Alpha & ... | 0.0 $ | 1000 | MOSFET N/P-CH 30V 4.3A/3.... |
AON4807_001 | Alpha & ... | 0.0 $ | 1000 | MOSFET 2P-CH 30V 4A 8DFNM... |
AON4807_101 | Alpha & ... | 0.0 $ | 1000 | MOSFET P-CH DUAL DFNMosfe... |
AON4803 | Alpha & ... | -- | 1000 | MOSFET 2P-CH 20V 3.4A DFN... |
AON4421 | Alpha & ... | -- | 1000 | MOSFET P-CH 30V 8A 8DFNP-... |
AON4407 | Alpha & ... | -- | 1000 | MOSFET P-CH 12V 9A 8DFNP-... |
AON4703 | Alpha & ... | -- | 1000 | MOSFET P-CH 20V 3.4A 8DFN... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...