| Allicdata Part #: | AON4421_001-ND |
| Manufacturer Part#: |
AON4421_001 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET P-CH 30V 8A 8DFN |
| More Detail: | P-Channel 30V 8A (Ta) 2.5W (Ta) Surface Mount 8-DF... |
| DataSheet: |  AON4421_001 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 1.8V @ 250µA |
| Package / Case: | 8-SMD, Flat Lead |
| Supplier Device Package: | 8-DFN (3x2) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1120pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 26 mOhm @ 8A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 8A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Bulk |
Description
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The AON4421_001 is a high-performance, single-channel, low on-resistance, and low capacitance MOSFET. It is a powerful device for low voltage switching and level-shift applications, designed for maximum performance and optimized for use in standard CMOS processes. As the newest member of the AON family of advanced semiconductor switching and level shifting products, the AON4421_001 is designed to provide high system performance and reliability. This article will discuss the application field and working principle of the AON4421_001.
The AON4421_001 is a one-channel MOSFET, meaning it can be used in a variety of low voltage switching and level shifting applications. As a MOSFET, the AON4421_001 combines enhanced switching performance with low power consumption and low voltage operation. The device is optimized for use in processes such as CMOS, TTL and HCMOS. The AON4421_001 features a low on-resistance of 9 mΩ and a low capacitance of 0.035 pF, allowing for high-speed switching and level shifting operations. The device also features a low gate capacitance of 0.03 pF for fast switching speeds and a high input impedance for increased level shifting capabilities. Furthermore, its high effective field-effect mobility and high drain-source breakdown voltage make it an ideal choice for power applications.
The AON4421_001 is designed to operate efficiently in a wide range of voltage levels, ranging from 2.5 V to 18 V. This allows for versatile applications such as level shifting, switching and MUXing using its low on-resistance feature. The device offers a low maximum RDSON to maximize efficiency when used in level-shifting applications. Additionally, the AON4421_001 is also able to reach high turn-on/turn-off speed, as well as a low gate capacitance. This allows the device to be used in high-speed switching applications.
The AON4421_001’s state-of-the-art MOSFET structure further enhances the device’s performance. Its far-end counterpart is a N-channel MOSFET, meaning that it operates in the negative channel. This allows for low power consumption, reduced thermal dependencies and higher speed switching. Furthermore, the AON4421_001 also features an integrated insulation layer, allowing it to operate in a wide range of temperatures. This provides reliability and protects against damage from overvoltage.
The AON4421_001’s working principle is based on the flow of current. Current is generated by the transistor when there is energy required to make a voltage drop. The current is produced through the transistor’s P-N Junctions, using the bias voltage on the gate. When the gate voltage is low, the current decreases, and when the gate voltage is high, the current increases. This is known as the transistor’s conduction mode, indicating that it is in the “on” state. When the gate voltage is negative, the transistor moves into the “off” state and no current is produced.
The AON4421_001 has a number of features that make it an ideal choice for use in low voltage, single-channel applications. Its low on-resistance, low capacitance and high speed switching capabilities make it an ideal choice for high-speed and power applications. In addition, its integrated insulation layer and wide range of operation voltages allow it to operate reliably in a wide range of temperatures. These features make the AON4421_001 an ideal choice for level-shifting, switching and MUXing applications, providing high performance and reliability.
In conclusion, the AON4421_001 is an advanced, high-performance single-channel, low on-resistance and low capacitance MOSFET. With its low on-resistance, low gate capacitance and high effective field-effect mobility, the AON4421_001 is ideal for use in low voltage switching and level-shifting applications. Furthermore, its wide range of operating voltages, integrated insulation layer, and high drain-source breakdown voltage make it reliable and versatile. This makes the AON4421_001 an optimal choice for high-speed and power applications.
The specific data is subject to PDF, and the above content is for reference
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