AON4407

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The AON4407 is an advanced SONOS type non-volatile memory cell, which combines logic and embedded non-volatile memory (NVM) and is capable of storing either logic bits or memory bits for decades using the same silicon area. This device integrates three separate transistors—a control select transistor, a storage select transistor, and a storage cell NFET—to form a non-volatile three transistor (NVT) unit.

AON4407 application field

The AON4407 is mainly used in low-power and small-form-factor applications, such as IoT devices and home automation systems, that require remote reprogrammability and non-volatility. This device is also used in medical devices, automotive components, and smartphones for faster decision-making, and for data retention and communication in mission critical applications. AON4407 is also known for its versatility, as it can function both as a logic element and as an embedded NVM. This allows designers to incorporate NVM functionality into their products without the need for a separate, dedicated NVM chip.

AON4407 working principle

The AON4407 is based on SONOS (Silicon-Oxide-Nitride-Oxide-Silicon) technology, which measures the trapped charge in a storage element as the logic value of a bit. The charge can be read and written by applying electrical signals to control the gate electrodes of the transistors. To write or read data, a set of control signals are applied to the device. The Control Select transistor selects between logic and non-volatile storage. When the storage select transistor is enabled, the stored data can be read, written, or programmed. During a write or reprogramming cycle, the gate voltage of the storage cell NFET is modified in order to write the data bit into it.

Once the data-writing cycle is completed, the NFET gate is electrically isolated from the input signals, thus enabling data retention for extended periods of time. This isolation is made possible by the control select transistor, which acts as a switch and prevents the charge stored in the NFET from leaking to the input. To read the stored information, the input signals are applied to the device again and the logic state of the NFET is evaluated and the corresponding logic output is obtained.

The AON4407 offers several benefits including excellent reliability and data retention time, small form-factor, wide temperature range operation, and low power consumption. This makes it an ideal memory solution for a variety of applications such as high-integrity systems, secure systems, and other embedded applications.

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