Allicdata Part #: | AON4705L-ND |
Manufacturer Part#: |
AON4705L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET P-CH 20V 4A |
More Detail: | P-Channel 20V 4A (Ta) 1.7W (Ta) Surface Mount 8-DF... |
DataSheet: | AON4705L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | 8-DFN (3x2) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.7W (Ta) |
FET Feature: | Schottky Diode (Isolated) |
Input Capacitance (Ciss) (Max) @ Vds: | 745pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 65 mOhm @ 4A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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AON4705L is a 45nm CMOS semiconductor device from Alpha and Omega semiconductor. It is a single enhancement-mode N-channel MOSFET which is used for a wide range of applications. This device provides significant performance improvements over traditional silicon MOSFETs and is available in a small SO-8 package.
AON4705L is an N-channel enhancement-mode device which is capable of providing high-speed switching performance with low gate drive power and reduced input capacitance. This device is designed to provide excellent switching speed and reduce switching time, while conserving power consumption. This makes it ideal for use in power management application, where it can be used to control the power to an electronic device.
The AON4705L can be used in a wide range of applications that require high-speed switching and low power consumption. It can be used to improve power efficiency in servers, routers, computers, cell phones and other digital devices. It can also be used to control the power supply of equipment in the automotive and industrial sectors.
The working principle of the AON4705L is based on the two parallel conducting channels formed in the normally-off N-channel MOSFET. When the gate voltage is raised above the threshold voltage, the electrons in the channel are attracted to the positively charged gate and form a conducting channel between the source and drain of the device. This allows current to flow from the source to the drain.
The AON4705L has a very low on-resistance of 40mΩ, and a low threshold voltage of 4.5V. This allows the device to be used in applications that require very low power, and low speed switching. The low on-resistance also helps in preserving power, as the device dissipates less heat when it is in the “on” state.
The AON4705L is also designed to have a low gate-source capacitance. This helps to reduce switching time, since the device will require less time to switch from its “on” state to its “off” state. This makes the device ideal for switching applications that require fast response times.
In conclusion, the AON4705L is a versatile semiconductor device that can be used in a wide variety of applications. It provides high-speed switching performance with low gate drive power, reducing input capacitance and low on-resistance. This makes it ideal for use in power management applications and other applications that require high-speed switching and low power consumption.
The specific data is subject to PDF, and the above content is for reference
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