AON4605_002

Series:	--
Part Status:	Obsolete

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The AON4605_002 is a type of Single-Polarity N-Channel Enhancement Mode Metal Oxide Semiconductor Field Effect Transistor (MOSFET) from Alpha and Omega Semiconductor. It is a leader in low RDSon designs featuring advanced FEATURES technology and improving power efficiency by providing lower on-resistance. This device features a 5.4V threshold voltage, making it an ideal choice for applications with limited voltage supply. The high-density feature reduces the gate charge, allowing for increased current delivery, while the thermal characteristics minimize power losses.AON4605_002 is a SOT23-3 package that is well suited to a wide variety of applications. It has a drain to source voltage of 50V, with a published parasitic drain to source capacitance of = 59pF. It has an average current of around 12A per package. It also has a very low on-state resistance, providing a high-efficiency switching dynamic. The AON4605_002 MOSFET is a usual choice for high-performance applications that require low voltage operation and high efficiency. It is well suited for applications such as: buck converters, high-side and low-side switches, point-of-load converters, or any other application where efficient and reliable switching is required.The AON4605_002 MOSFET has an enhancement mode operation which makes it suitable for low-side switching and low-voltage operation. It has a gate threshold voltage of around -5.4V, which allows for greater flexibility in the design of power supply systems. When the voltage is applied to the gate, the device turns on and allows the current to flow through the channel. When the gate voltage is removed, the current stops flowing, and the device acts as an insulator. On the other hand, the AON4605_002 MOSFET also has an off-state axial leakage current. This means that, when in off-state, it conducts a small amount of current. This leakage current can cause the transistor to turn itself on and hold a charge, making it not suitable for certain applications. In order to avoid this situation, the gate voltage needs to be kept below the threshold voltage in order to avoid it. The AON4605_002 MOSFET has many advantages, such as high-efficiency switching and a lowS RDS(on). It combines a low gate charge, low capacitance, and a low parasitic drain-source capacitance, which makes it an ideal choice for applications that require fast switching and low power loss. In addition, it features a low threshold voltage for improved efficiency. In conclusion, the AON4605_002 MOSFET from Alpha and Omega Semiconductor is a great choice for applications requiring high-performance solutions with low power losses and high efficiency. It is a reliable and efficient device with outstanding characteristics and is suitable for a wide range of applications.

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