AON4407L_002

Vgs(th) (Max) @ Id:	850mV @ 250µA
Package / Case:	8-SMD, Flat Lead
Supplier Device Package:	8-DFN (3x2)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2100pF @ 6V
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	23nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	20 mOhm @ 9A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	9A (Ta)
Drain to Source Voltage (Vdss):	12V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Bulk

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<p>AON4407L_002 is an RF and Signal Processing BalancedLinear ultra-low power FET from Panasonic. It is commonly used in various RF applications, such as low noise amplifiers, RF front-ends, receiver and transceiver blocks, and wireless systems.</p><p>The AON4407L_002 is an enhancement-mode (normally-off) device that operates from a single supply of 2.5 volts. It has an RDS(ON) of 25Ω at VGS= 5V and 20Ω at VGS=2.5V. It also offers a very low off-state leakage current of 2.6 pA and a low gate charge of 4nC.</p><p>AON4407L_002 application field mainly includes:</p> <ul><li>Low noise Amplifier (LNA)</li><li>RF Front-Ends</li><li>Transceivers and Receivers Blocks</li><li>Wireless Systems</li></ul><p>The working principle of the AON4407L_002 is based on the field-effect technology. It is basically a three-terminal type product with a gate-source (GS) and drain-source (DS) terminal. When the GS voltage is higher than the source voltage, current flows throught the channel.</p><p>The AON4407L_002 is built with a high-performance Gallium Arsenide-based MOSFET transistor. Its substrate is based on a Gallium Aluminum Oxynitride (GaAlON) that provides superior property and improved ESD robustness.</p><p>The AON4407L_002 features excellent linearity and low noise figure (NF), superior power handling capability, and low on-state resistance. With its high linearity and low noise figure, it has become the ideal FET solution for RF and signal processing applications.</p><p>In addition, the AON4407L_002 offers excellent thermal and electrical stability which makes it suitable for low power operation, such as battery-powered equipment and communication systems. Its advanced process technology allows for high yield and steady performance in various operating conditions.</p><p>Overall, the AON4407L_002 provides excellent RF performance, excellent power efficiency, and superior thermal and electrical stability, making it an ideal device for various RF and signal processing applications.</p>

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