Allicdata Part #: | AON6230-ND |
Manufacturer Part#: |
AON6230 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 40V 57.5A 8DFN |
More Detail: | N-Channel 40V 57.5A (Ta), 85A (Tc) 7.4W (Ta), 104W... |
DataSheet: | AON6230 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Package / Case: | 8-PowerSMD, Flat Leads |
Supplier Device Package: | 8-DFN (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 7.4W (Ta), 104W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6050pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 114nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.44 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 57.5A (Ta), 85A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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AON6230 is a single-N-channel enhancement mode field effect transistor, which is typically used to provide overcurrent protection in battery-powered to portable applications. This cutting-edge transistor features low on-resistance, low gate resistance, and process-compatible, gate-controlled turn off. It is differentiated from other transistors in that its size is ultra-small, with the package height being only 0.75m, which makes it suitable for space-constrained applications like integrated circuits and printed circuit boards.
AON6230 operates through a field effect mechanism, and it is sensitive to drain voltage and current. This feature enables the transistor to turn into off state when current flowing through the drain is more than the set resistance, which can be used to protect circuits when an overloaded current is detected. This functionality sets it apart from many other transistors. It also has an internal protection feature to ensure safe operation and prevent the damage caused by short-circuits and over-current.
AON6230 features extremely low on-resistance, which allows it to provide low power loss and less power consumption. It also has a robust gate driver with a fast turn-on and turn-off time and low capacitance, allowing for increased switching speed and high-efficiency operation. Additionally, this transistor incorporates a low gate-voltage process, which allows it to be used in applications that require a low-voltage supply, such as portable electronics.
AON6230 offers several advantages, such as its small size, high efficiency, and low power consumption. It also provides fast switching speed, excellent temperature performance and wide range of operating supply voltage. These features make it ideal for providing over-current protection in portable and battery-powered applications, including mobile phones and other consumer electronics.
In conclusion, AON6230 is an excellent single-N-channel enhancement mode field effect transistor that provides low on-resistance and process-compatible gate-controlled turn off for maximum protection against over-current. Its small size, high efficiency and low-voltage capabilities make it an ideal choice for battery-powered, space-constrained applications, such as consumer electronics and integrated circuits.
The specific data is subject to PDF, and the above content is for reference
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