AON6266E

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

AON6266E is a Single N-Channel RF Power Field Effect Transistor (FET). It is suitable for any RF applications requiring high power and efficiency, such as cellular base station. The device is housed in a 3x2 DSBGA package which improves the thermal performance and reduce board space occupation.

General Overview of the AON6266E

The AON6266E is a Single N-Channel RF Power Field Effect Transistor (FET) which is suitable for use in cellular base stations, RF amplifier, GPS and other communication systems requiring high power and efficiency. It is designed with a lateral, double-polarized structure and advanced trench MOSFET technology. This device can provide high power density and excellent power efficiency up to 65%.

Characteristics of the AON6266E

• Thermal Resistance: 0.7°C/W
• Operating Voltage: 4.2 V
• Maximum Drain Source Voltage (VDS): 20 V
• On-Resistance (RDS): 1.8 mΩ
• Current Rating: 6.5 A
• Maximum Power Dissipation: 77.6 W
• Frequency Range: 700 MHz - 2.7 GHz

Working Principle of the AON6266E

The AON6266E works on the principle of the Field Effect Transistor (FET), which is a type of transistor consisting of source and drain terminals, with a channel connecting them. The FET is an electrically operated switch which allows current to flow through it when a voltage signal is applied to its gate. In the AON6266E, the gate is connected to a thin layer of insulating material called the gate oxide, and the source and drain regions are connected to a common substrate. When a voltage signal is applied to the gate, it increases the electric field in the channel, which in turn increases the current flow through the device. This makes the AON6266E an ideal device for high-power RF applications, where high current and low power loss are required.

Applications of the AON6266E

The AON6266E is an ideal device for any high-power RF applications requiring high efficiency, such as cellular base station, GPS, and other communication systems. It can also be used in amplifiers, switching circuits, and other circuits which require low power loss and efficient current switching. The device is also well suited for use in high-power RF power amplifiers and power amplifiers with power requirements up to 5W.

Conclusion

The AON6266E is a Single N-Channel RF Power Field Effect Transistor (FET) which is suitable for use in any high-power RF applications requiring high efficiency. It is designed with a lateral, double-polarized structure and advanced trench MOSFET technology, which makes it an ideal device for use in amplifiers, switching circuits, and other circuits which require low power loss and efficient current switching. The device is also well suited for use in high-power RF power amplifiers and power amplifiers with power requirements up to 5W.

The specific data is subject to PDF, and the above content is for reference