AON6358 Allicdata Electronics
Allicdata Part #:

785-1739-2-ND

Manufacturer Part#:

AON6358

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 30V 42A DFN
More Detail: N-Channel 30V 42A (Ta), 85A (Tc) 6.2W (Ta), 48W (T...
DataSheet: AON6358 datasheetAON6358 Datasheet/PDF
Quantity: 3000
Stock 3000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Package / Case: 8-PowerSMD, Flat Leads
Supplier Device Package: 8-DFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.2W (Ta), 48W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 85A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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AON6358 Application Field and Working Principle

AON6358 is a high-frequency switching power MOSFET developed by Alpha and Omega Semiconductor (AOS). It belongs to a single silicon MOSFET device, which is one of the most commonly used components in today’s power electronic field.

The AON6358 device has various applications, particularly in the switch mode power supplies, A/D converters, battery-powered portable systems, telephone base stations and more. The advantages of using the AON6358 are its high current drive capability and low on-resistance. It can also provide efficient power transfer in an energy-efficient manner, with very low switching losses.

The main functional components of the AON6358 are its internal gate driver, high-speed switching power MOSFET device, overvoltage protection circuits, self-resetting circuit, and a voltage regulator module. When used in applications where tight control on switching time is required, the internal gate driver can be utilized to accurately control the gate voltage. This enables the switching time to remain constant regardless of the load conditions.

The working principle of the AON6358 is based on the MOSFET technology. The operation is essentially the same as with other MOSFETs, with a body diode being used as the switch element. The MOSFET can be turned on and off by adjusting the gate voltage, and the current is modulated by the input voltage. When the MOSFET is in the on-state, it is able to conduct current from the source (or drain) to the drain (or source). In the off-state, the MOSFET is not conducting and the current flow is blocked. This switching effect is what enables the AON6358 to provide efficient power transfer.

The advantage of the AON6358 over other MOSFETs is that it has a low on-resistance and therefore can allow for better power handling capability. Additionally, with its low voltage drop, it can operate with higher frequency and in lower power system, making it ideal for applications such as switch mode power supplies and battery powered systems. Furthermore, the integrated protection circuits help protect the device in the event of an overvoltage condition.

The AON6358 has a low parasitic inductance and good EMI performance, which makes it a great choice for applications where high-frequency switching is necessary. It can also perform under heavy-duty conditions, making it a reliable option.

In conclusion, the AON6358 is a versatile, high-speed, low on-resistance power MOSFET device. It can be used in a variety of applications, and is particularly well-suited for switch mode power supplies and other power electronic systems. It has a high current drive capability and excellent EMI performance. Its protection circuits are also useful for situations where overvoltage might occur. The integrated gate driver and low on-resistance makes it a suitable choice for high-frequency switching.

The specific data is subject to PDF, and the above content is for reference

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