AON6362 Allicdata Electronics
Allicdata Part #:

785-1741-2-ND

Manufacturer Part#:

AON6362

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 30V 27A DFN
More Detail: N-Channel 30V 27A (Ta), 60A (Tc) 6.2W (Ta), 31W (T...
DataSheet: AON6362 datasheetAON6362 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Package / Case: 8-PowerSMD, Flat Leads
Supplier Device Package: 8-DFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.2W (Ta), 31W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The AON6362 is an exceptionally versatile integrated device from Alpha & Omega Semiconductor. It is a high-voltage cascode P-Channel MOSFET that provides protection to the load from overvoltage and over-current conditions. With its Active Body Diode, it ensures a robust, powerful, and ultra-low on-resistance performance. The device is designed to be used in the automotive and industrial applications such as e-motor drives, power supplies, and DC/DC converters. It is widely used in high-current, high-voltage applications such as battery-powered power tools, robotic systems, and industrial equipment.

The AON6362 is a high-voltage, low-RDS(on), and wide-drain-source voltage P-channel MOSFET integrated device. It is fabricated by a patented technology called AlphaMOS (alpha-MoS) which enables the highest level of on-resistance along with excellent gate oxide integrity. This MOSFET is the first and only integrated component to offer the unique combination of a high-voltage main switch/ protection switch, low on-resistance, and low capacitance. The integrated design utilizes two back to back P-channel MOSFETS, a junctionless channel, dielectric isolation, and short circuit protection.

The main working principle of the AON6362 is to use the high-voltage MOSFET switch to protect the load from over-current and over-voltage conditions. The high-voltage MOSFET provides high current switching capability while allowing the switch to remain almost completely off while no load is present. This reduces power dissipation at the device resulting in improved efficiency. This high-voltage MOSFET also features a body diode which helps to improve the protection of the load in the event of a short circuit. The body diode also helps reduce power dissipation and improve efficiency. Furthermore, the MOSFET is also designed with temperature and over-current protection, making it safe for use in the harsh environment.

The AON6362 offers a number of advantages to the user which include improved power efficiency, low on-resistance, low capacitance, and temperature protection. The device also has a wide range of operating temperatures making it suitable for the harsh environment that many industrial applications require. Furthermore, the integrated design requires no additional external components, making the design easier to implement and reducing the size of the circuit board. In addition to these benefits, the device also offers improved reliability due to its robust architecture.

In summary, the AON6362 is an excellent choice for high-current, high-voltage applications. It offers excellent performance in terms of on-resistance, switching speed, and temperature protection. The integrated design also reduces design complexity and reduces the size of the circuit board. The device is well suited for applications such as e-motor drives, power supplies, and DC/DC converters due to its superior performance and robust architectural design. The AON6362 is an efficient and reliable product for applications where over-current and over-voltage protection are essential.

The specific data is subject to PDF, and the above content is for reference

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