AON6414A Allicdata Electronics
Allicdata Part #:

785-1226-2-ND

Manufacturer Part#:

AON6414A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 30V 5X6DFN
More Detail: N-Channel 30V 13A (Ta), 30A (Tc) 2.3W (Ta), 31W (T...
DataSheet: AON6414A datasheetAON6414A Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: 8-PowerSMD, Flat Leads
Supplier Device Package: 8-DFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.3W (Ta), 31W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 30A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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AON6414A is a 2 DMOS, complementary FET with ultra-low on-state resistance and a gate-source voltage rating of 20V. It is fabricated using advanced low-voltage process, bonding and packaging technology. The device is noted for its fast switching, ultra-low on-state resistance and low RDS(ON). It is robust in design and highly integrated with a highly efficient cooling system. It can operate at a temperature range of -40°C to +125°C, with an operating frequency range of 25kHz to 200kHz. The device is rated for a maximum current of 24A.

The AON6414A is suitable for applications where fast switching, low on-state resistance and moderate maximum current ratings are required. It is used to drive motors, LEDs, AC and DC loads, and other power control in various industries. It has wide usage in industrial automation and communications systems, automotive electronics, consumer electronics and power supplies.

The working principle of this device involves the use of two MOSFETs controlled by the gate drive. The gate drive provides a voltage signal to the gate of the two transistors. The gate voltage varies between 0V to the specific voltage level when connected. When a higher level of voltage is applied to the gate, current flows through the drain-source junction of the two MOSFETs and gets amplified.

The two FETs are arranged in a push-pull configuration and the input signal is applied to the gate of the upper FET. When the signal is high, the upper FET turns on and the current flows through the drain-source junction of the upper FET. This current is transferred to the source of the lower FET and the lower FET is forced to turn off. When the signal is low, the upper FET is forced to turn off and the lower FET is turned on. The current is then forced to flow through the drain-source junction of the lower FET and is amplified.

The AON6414A is a highly efficient device. It provides fast switching as well as low on-state resistance and moderate current ratings. The device offers a variety of applications in various industries like automotive electronics, communications systems, industrial automation and power supplies. The working principle of the AON6414A involves the use of two MOSFETs arranged in a push-pull configuration. The input signal is applied to the gate of the upper FET and the current is transferred to the source of the lower FET.

The specific data is subject to PDF, and the above content is for reference

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